Quantum well saturable absorber mirror with electrical control of modulation depth

Xiaomin Liu; Edik U. Rafailov; Daniil Livshits; Dmitry Turchinovich

doi:10.1063/1.3474799

Quantum well saturable absorber mirror with electrical control of modulation depth

Xiaomin Liu
, Edik U. Rafailov
, Daniil Livshits
, Dmitry Turchinovich

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

We demonstrate a quantum well QW semiconductor saturable absorber mirror SESAM comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0–2 V to the p-i-n structure, we were able to change the SESAM modulation depth in the range 2.5–0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6–26.7 J /cm2. This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect in the QWs.

Original language	English
Journal	Applied Physics Letters
Volume	97
Pages (from-to)	1-3
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.3474799
Publication status	Published - 2010

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Turchinovich APL 97 051103 2010Final published version, 153 KB

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title = "Quantum well saturable absorber mirror with electrical control of modulation depth",

abstract = "We demonstrate a quantum well QW semiconductor saturable absorber mirror SESAM comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0–2 V to the p-i-n structure, we were able to change the SESAM modulation depth in the range 2.5–0.5\%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6–26.7 J /cm2. This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect in the QWs.",

author = "Xiaomin Liu and Rafailov, \{Edik U.\} and Daniil Livshits and Dmitry Turchinovich",

year = "2010",

doi = "10.1063/1.3474799",

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volume = "97",

pages = "1--3",

journal = "Applied Physics Letters",

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T1 - Quantum well saturable absorber mirror with electrical control of modulation depth

AU - Liu, Xiaomin

AU - Rafailov, Edik U.

AU - Livshits, Daniil

AU - Turchinovich, Dmitry

PY - 2010

Y1 - 2010

N2 - We demonstrate a quantum well QW semiconductor saturable absorber mirror SESAM comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0–2 V to the p-i-n structure, we were able to change the SESAM modulation depth in the range 2.5–0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6–26.7 J /cm2. This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect in the QWs.

AB - We demonstrate a quantum well QW semiconductor saturable absorber mirror SESAM comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0–2 V to the p-i-n structure, we were able to change the SESAM modulation depth in the range 2.5–0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6–26.7 J /cm2. This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect in the QWs.

U2 - 10.1063/1.3474799

DO - 10.1063/1.3474799

M3 - Journal article

SN - 0003-6951

VL - 97

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Quantum well saturable absorber mirror with electrical control of modulation depth

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