Quantum well saturable absorber mirror with electrical control of modulation depth

Xiaomin Liu, Edik U. Rafailov, Daniil Livshits, Dmitry Turchinovich

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Abstract

We demonstrate a quantum well QW semiconductor saturable absorber mirror SESAM comprising low-temperature grown InGaAs/GaAs QWs incorporated into a p-i-n structure. By applying the reverse bias voltage in the range 0–2 V to the p-i-n structure, we were able to change the SESAM modulation depth in the range 2.5–0.5%, as measured by nonlinear reflectivity of 450 fs long laser pulses with 1065 nm central wavelength, in the pump fluence range 1.6–26.7 J /cm2. This electrical control of the modulation depth is achieved by controlling the small-signal loss of the SESAM via quantum-confined Stark effect in the QWs.
Original languageEnglish
JournalApplied Physics Letters
Volume97
Pages (from-to)1-3
ISSN0003-6951
DOIs
Publication statusPublished - 2010

Keywords

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