We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled In(Ga)As quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD) samples with varying thickness of the capping layer. The modification of the local density of optical states as a function of the distance between the QDs and the GaAsair interface enables the extraction of the radiative and nonradiative decay rates, from which we calculate an OS of 10.1±2.6 and an encouragingly high QE of (48±14)% for the SCQDs.
|Title of host publication||Proceedings DGP Verhandlungen|
|Publication status||Published - 2010|
|Event||DPG-Verhandlungen: Semiconductor Physics Division : Quantum Dots and Wires: Optical Properties III - Regensburg, Germany|
Duration: 1 Jan 2010 → …
|Conference||DPG-Verhandlungen: Semiconductor Physics Division : Quantum Dots and Wires: Optical Properties III|
|Period||01/01/2010 → …|