Abstract
We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled In(Ga)As quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled
quantum dot (SCQD) samples with varying thickness of the capping layer. The modification of the local density of optical states as a function of the distance between the QDs and the GaAsair interface enables the extraction of the radiative and nonradiative decay rates, from which we
calculate an OS of 10.1±2.6 and an encouragingly high QE of (48±14)% for the SCQDs.
Original language | English |
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Title of host publication | Proceedings DGP Verhandlungen |
Publication date | 2010 |
Pages | HL37.4 |
Publication status | Published - 2010 |
Event | DPG-Verhandlungen: Semiconductor Physics Division : Quantum Dots and Wires: Optical Properties III - Regensburg, Germany Duration: 1 Jan 2010 → … |
Conference
Conference | DPG-Verhandlungen: Semiconductor Physics Division : Quantum Dots and Wires: Optical Properties III |
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City | Regensburg, Germany |
Period | 01/01/2010 → … |