Quantum efficiency and oscillator strength of site-controlled InGaAs quantum dots

F. Albert, C. Schneider, Søren Stobbe, S. Höfling, S. Reitzenstein, Peter Lodahl, L. Worschech, A. Forchel

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled In(Ga)As quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD) samples with varying thickness of the capping layer. The modification of the local density of optical states as a function of the distance between the QDs and the GaAsair interface enables the extraction of the radiative and nonradiative decay rates, from which we calculate an OS of 10.1±2.6 and an encouragingly high QE of (48±14)% for the SCQDs.
Original languageEnglish
Title of host publicationProceedings DGP Verhandlungen
Publication date2010
PagesHL37.4
Publication statusPublished - 2010
EventDPG-Verhandlungen: Semiconductor Physics Division : Quantum Dots and Wires: Optical Properties III - Regensburg, Germany
Duration: 1 Jan 2010 → …

Conference

ConferenceDPG-Verhandlungen: Semiconductor Physics Division : Quantum Dots and Wires: Optical Properties III
CityRegensburg, Germany
Period01/01/2010 → …

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