Quantum efficiency and oscillator strength of site-controlled InGaAs quantum dots

F. Albert; C. Schneider; Søren Stobbe; S. Höfling; S. Reitzenstein; Peter Lodahl; L. Worschech; A. Forchel

Quantum efficiency and oscillator strength of site-controlled InGaAs quantum dots

F. Albert, C. Schneider, Søren Stobbe, S. Höfling, S. Reitzenstein, Peter Lodahl, L. Worschech, A. Forchel

Universität Würzburg

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled In(Ga)As quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD) samples with varying thickness of the capping layer. The modification of the local density of optical states as a function of the distance between the QDs and the GaAsair interface enables the extraction of the radiative and nonradiative decay rates, from which we calculate an OS of 10.1±2.6 and an encouragingly high QE of (48±14)% for the SCQDs.

Original language	English
Title of host publication	Proceedings DGP Verhandlungen
Publication date	2010
Pages	HL37.4
Publication status	Published - 2010
Event	DPG-Verhandlungen: Semiconductor Physics Division : Quantum Dots and Wires: Optical Properties III - Regensburg, Germany Duration: 1 Jan 2010 → …

Conference

Conference	DPG-Verhandlungen: Semiconductor Physics Division : Quantum Dots and Wires: Optical Properties III
City	Regensburg, Germany
Period	01/01/2010 → …

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title = "Quantum efficiency and oscillator strength of site-controlled InGaAs quantum dots",

abstract = "We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled In(Ga)As quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD) samples with varying thickness of the capping layer. The modification of the local density of optical states as a function of the distance between the QDs and the GaAsair interface enables the extraction of the radiative and nonradiative decay rates, from which we calculate an OS of 10.1±2.6 and an encouragingly high QE of (48±14)% for the SCQDs.",

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year = "2010",

language = "English",

pages = "HL37.4",

booktitle = "Proceedings DGP Verhandlungen",

note = "DPG-Verhandlungen: Semiconductor Physics Division : Quantum Dots and Wires: Optical Properties III ; Conference date: 01-01-2010",

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Albert, F, Schneider, C, Stobbe, S, Höfling, S, Reitzenstein, S, Lodahl, P, Worschech, L & Forchel, A 2010, Quantum efficiency and oscillator strength of site-controlled InGaAs quantum dots. in Proceedings DGP Verhandlungen. pp. HL37.4, DPG-Verhandlungen: Semiconductor Physics Division : Quantum Dots and Wires: Optical Properties III, Regensburg, Germany, 01/01/2010. <http://www.dpg-verhandlungen.de/2010/regensburg/hl37.pdf>

TY - GEN

T1 - Quantum efficiency and oscillator strength of site-controlled InGaAs quantum dots

AU - Albert, F.

AU - Schneider, C.

AU - Stobbe, Søren

AU - Höfling, S.

AU - Reitzenstein, S.

AU - Lodahl, Peter

AU - Worschech, L.

AU - Forchel, A.

PY - 2010

Y1 - 2010

N2 - We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled In(Ga)As quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD) samples with varying thickness of the capping layer. The modification of the local density of optical states as a function of the distance between the QDs and the GaAsair interface enables the extraction of the radiative and nonradiative decay rates, from which we calculate an OS of 10.1±2.6 and an encouragingly high QE of (48±14)% for the SCQDs.

AB - We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled In(Ga)As quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD) samples with varying thickness of the capping layer. The modification of the local density of optical states as a function of the distance between the QDs and the GaAsair interface enables the extraction of the radiative and nonradiative decay rates, from which we calculate an OS of 10.1±2.6 and an encouragingly high QE of (48±14)% for the SCQDs.

M3 - Article in proceedings

SP - HL37.4

BT - Proceedings DGP Verhandlungen

T2 - DPG-Verhandlungen: Semiconductor Physics Division : Quantum Dots and Wires: Optical Properties III

Y2 - 1 January 2010

ER -

Quantum efficiency and oscillator strength of site-controlled InGaAs quantum dots

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