Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

F. Albert, Søren Stobbe, C. Schneider, T. Heindel, Stephan Reitzenstein, S. Höfling, Peter Lodahl, L. Worschech, A. Forchel

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Abstract

We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD) samples with varying thickness of the capping layer. We determine radiative and nonradiative decay rates, from which we calculate an OS of 10.1+/-2.6 and an encouragingly high QE of (47+/-14)% for the SCQDs. The nonideal QE is attributed to nonradiative recombination at the etched nanohole interface
Original languageEnglish
JournalApplied Physics Letters
Volume96
Issue number15
Pages (from-to)151102
ISSN0003-6951
DOIs
Publication statusPublished - 2010

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Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Cite this

Albert, F., Stobbe, S., Schneider, C., Heindel, T., Reitzenstein, S., Höfling, S., Lodahl, P., Worschech, L., & Forchel, A. (2010). Quantum efficiency and oscillator strength of site-controlled InAs quantum dots. Applied Physics Letters, 96(15), 151102. https://doi.org/10.1063/1.3393988