Quantum efficiency and oscillator strength of site-controlled InAs quantum dots

F. Albert, Søren Stobbe, C. Schneider, T. Heindel, Stephan Reitzenstein, S. Höfling, Peter Lodahl, L. Worschech, A. Forchel

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We report on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the quantum efficiency (QE) of site-controlled InAs quantum dots nucleating on patterned nanoholes. These two quantities are determined by measurements on site-controlled quantum dot (SCQD) samples with varying thickness of the capping layer. We determine radiative and nonradiative decay rates, from which we calculate an OS of 10.1+/-2.6 and an encouragingly high QE of (47+/-14)% for the SCQDs. The nonideal QE is attributed to nonradiative recombination at the etched nanohole interface
Original languageEnglish
JournalApplied Physics Letters
Issue number15
Pages (from-to)151102
Publication statusPublished - 2010

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Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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