Quantum dot  resonant tunneling  diode single  photon detector  with aluminum oxide  aperture defined  tunneling area

H.W. Li; Beata Kardynal; D.J.P. Ellis; A.J. Shields; I. Farrer; D.A. Ritchie

doi:10.1063/1.2978232

Quantum dot resonant tunneling diode single photon detector with aluminum oxide aperture defined tunneling area

H.W. Li, Beata Kardynal, D.J.P. Ellis, A.J. Shields, I. Farrer, D.A. Ritchie

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Abstract

Quantum dot resonant tunneling diode single photon detector with independently defined absorption and sensing areas is demonstrated. The device, in which the tunneling is constricted to an aperture in an insulating layer in the emitter, shows electrical characteristics typical of high quality resonant tunneling diodes. A single photon detection efficiency of 2.1%+/- 0.1% at 685 nm was measured corresponding to an internal quantum efficiency of 14%. The devices are simple to fabricate, robust, and show promise for large absorption area single photon detectors based on quantum dot structures.

Original language	English
Journal	Applied Physics Letters
Volume	93
Issue number	15
Pages (from-to)	153503
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.2978232
Publication status	Published - 2008

Bibliographical note

Copyright (2008) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

FIELD-EFFECT TRANSISTOR

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10.1063/1.2978232

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http://link.aip.org/link/APPLAB/v93/i15/p153503/s1

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AU - Shields, A.J.

AU - Farrer, I.

AU - Ritchie, D.A.

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AB - Quantum dot resonant tunneling diode single photon detector with independently defined absorption and sensing areas is demonstrated. The device, in which the tunneling is constricted to an aperture in an insulating layer in the emitter, shows electrical characteristics typical of high quality resonant tunneling diodes. A single photon detection efficiency of 2.1%+/- 0.1% at 685 nm was measured corresponding to an internal quantum efficiency of 14%. The devices are simple to fabricate, robust, and show promise for large absorption area single photon detectors based on quantum dot structures.

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