Quantization of Hall Resistance at the Metallic Interface between an Oxide Insulator and SrTiO3

Felix Trier, Guenevere E. D. K. Prawiroatmodjo, Zhicheng Zhong, Dennis Valbjørn Christensen, Merlin von Soosten, Arghya Bhowmik, Juan Maria García Lastra, Yunzhong Chen, Thomas Sand Jespersen, Nini Pryds

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Abstract

The two-dimensional metal forming at the interface between an oxide insulatorand SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two dimensions, remains underexplored at these complex oxide heterointerfaces. Here, we report the experimental observation of quantized Hall resistance in a SrTiO3 heterointerface based on the modulation-doped amorphous-LaAlO3/SrTiOheterostructure, which exhibits both highelectron mobility exceeding 10, 000 cm2/V s and low carrier density on the order of ~1012 cm-2. Along with unambiguous Shubnikov-de Haasoscillations, the spacing of the quantized Hall resistance suggests that the interface is comprised of a single quantum well with ten parallel conducting two-dimensional subbands. This provides new insight into the electronic structure of conducting oxide interfaces and represents an important step towards designing and understanding advanced oxide devices.
Original languageEnglish
Article number096804
JournalPhysical Review Letters
Volume117
Number of pages6
ISSN0031-9007
DOIs
Publication statusPublished - 2016

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