Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography

Research output: Contribution to journalJournal article – Annual report year: 2011Researchpeer-review

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Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography. / Cooper, David; Rouviere, Jean-Luc; Béché, Armand; Kadkhodazadeh, Shima; Semenova, Elizaveta; Yvind, Kresten; Dunin-Borkowski, Rafal E.

In: Applied Physics Letters, Vol. 99, No. 26, 2011, p. 261911.

Research output: Contribution to journalJournal article – Annual report year: 2011Researchpeer-review

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@article{9a1b300c54034e928853e4ee0b16f6eb,
title = "Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography",
abstract = "The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAs quantum dots grown in InP with a spatial resolution of 1 nm. A strain value of 5.4{\%}60.1{\%} has been determined which is consistent with both measurements made by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images and with simulations.",
author = "David Cooper and Jean-Luc Rouviere and Armand B{\'e}ch{\'e} and Shima Kadkhodazadeh and Elizaveta Semenova and Kresten Yvind and Dunin-Borkowski, {Rafal E.}",
note = "Copyright 2011 American Institute of Physics.",
year = "2011",
doi = "10.1063/1.3672194",
language = "English",
volume = "99",
pages = "261911",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "26",

}

RIS

TY - JOUR

T1 - Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography

AU - Cooper, David

AU - Rouviere, Jean-Luc

AU - Béché, Armand

AU - Kadkhodazadeh, Shima

AU - Semenova, Elizaveta

AU - Yvind, Kresten

AU - Dunin-Borkowski, Rafal E.

N1 - Copyright 2011 American Institute of Physics.

PY - 2011

Y1 - 2011

N2 - The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAs quantum dots grown in InP with a spatial resolution of 1 nm. A strain value of 5.4%60.1% has been determined which is consistent with both measurements made by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images and with simulations.

AB - The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAs quantum dots grown in InP with a spatial resolution of 1 nm. A strain value of 5.4%60.1% has been determined which is consistent with both measurements made by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images and with simulations.

U2 - 10.1063/1.3672194

DO - 10.1063/1.3672194

M3 - Journal article

VL - 99

SP - 261911

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 26

ER -