Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography

David Cooper, Jean-Luc Rouviere, Armand Béché, Shima Kadkhodazadeh, Elizaveta Semenova, Kresten Yvind, Rafal E. Dunin-Borkowski

    Research output: Contribution to journalJournal articleResearchpeer-review

    526 Downloads (Pure)

    Abstract

    The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAs quantum dots grown in InP with a spatial resolution of 1 nm. A strain value of 5.4%60.1% has been determined which is consistent with both measurements made by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images and with simulations.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume99
    Issue number26
    Pages (from-to)261911
    ISSN0003-6951
    DOIs
    Publication statusPublished - 2011

    Bibliographical note

    Copyright 2011 American Institute of Physics.

    Fingerprint

    Dive into the research topics of 'Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography'. Together they form a unique fingerprint.

    Cite this