Quantitative strain mapping of InAs/InP quantum dots with 1 nm spatial resolution using dark field electron holography

David Cooper, Jean-Luc Rouviere, Armand Béché, Shima Kadkhodazadeh, Elizaveta Semenova, Kresten Yvind, Rafal E. Dunin-Borkowski

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Abstract

The optical properties of semiconductor quantum dots are greatly influenced by their strain state. Dark field electron holography has been used to measure the strain in InAs quantum dots grown in InP with a spatial resolution of 1 nm. A strain value of 5.4%60.1% has been determined which is consistent with both measurements made by geometrical phase analysis of high angle annular dark field scanning transmission electron microscopy images and with simulations.
Original languageEnglish
JournalApplied Physics Letters
Volume99
Issue number26
Pages (from-to)261911
ISSN0003-6951
DOIs
Publication statusPublished - 2011

Bibliographical note

Copyright 2011 American Institute of Physics.

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