Abstract
The optical properties of semiconductor quantum dots are greatly influenced by their strain state.
Dark field electron holography has been used to measure the strain in InAs quantum dots grown in
InP with a spatial resolution of 1 nm. A strain value of 5.4%60.1% has been determined which is
consistent with both measurements made by geometrical phase analysis of high angle annular dark
field scanning transmission electron microscopy images and with simulations.
Original language | English |
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Journal | Applied Physics Letters |
Volume | 99 |
Issue number | 26 |
Pages (from-to) | 261911 |
ISSN | 0003-6951 |
DOIs | |
Publication status | Published - 2011 |