Quantitative Measurement of Active Dopant Density Distribution in Black Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy

Yasuo Cho; Beniamino Iandolo; Ole Hansen

doi:10.1109/PVSC48317.2022.9938925

Quantitative Measurement of Active Dopant Density Distribution in Black Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy

Yasuo Cho, Beniamino Iandolo, Ole Hansen

National Centre for Nano Fabrication and Characterization

Tohoku University

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

We investigated quantitatively the carrier distribution in a phosphorous (P) diffused black Silicon (Si) solar cell using scanning nonlinear dielectric microscopy (SNDM). As a reference, we measured the carrier distribution on a flat Si sample fabricated under the same P diffusion conditions. The precise carrier distributions in the emitter were visualized, which revealed the feature of carrier distribution in the emitter of black Si solar cell. Super-higher-order-SNDM was also employed to perform a quantitative analysis of the depletion layer distribution. It was found that the carrier density profile and the depletion layer thickness is less regular in the black Si than in the flat emitter, suggesting that this fluctuation may affect the power conversion efficiency of black Si solar cell.

Original language	English
Title of host publication	Proceedings of 2022 IEEE 49^th Photovoltaics Specialists Conference (PVSC)
Publisher	IEEE
Publication date	2022
Pages	0461-0463
ISBN (Electronic)	978-1-7281-6117-4
DOIs	https://doi.org/10.1109/PVSC48317.2022.9938925
Publication status	Published - 2022
Event	49th IEEE Photovoltaic Specialists Conference - Philadelphia, United States Duration: 5 Jun 2022 → 10 Jun 2022 Conference number: 49 https://ieee-pvsc.org/PVSC49/index.php

Conference

Conference	49th IEEE Photovoltaic Specialists Conference
Number	49
Country/Territory	United States
City	Philadelphia
Period	05/06/2022 → 10/06/2022
Internet address	https://ieee-pvsc.org/PVSC49/index.php

Keywords

Black silicon solar cell
Carrier profiling
Depletion layer
Scanning ninlinear dielectric microscopy
Super-higher-order scanning nonlinear dielectric microscopy

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10.1109/PVSC48317.2022.9938925

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title = "Quantitative Measurement of Active Dopant Density Distribution in Black Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy",

abstract = "We investigated quantitatively the carrier distribution in a phosphorous (P) diffused black Silicon (Si) solar cell using scanning nonlinear dielectric microscopy (SNDM). As a reference, we measured the carrier distribution on a flat Si sample fabricated under the same P diffusion conditions. The precise carrier distributions in the emitter were visualized, which revealed the feature of carrier distribution in the emitter of black Si solar cell. Super-higher-order-SNDM was also employed to perform a quantitative analysis of the depletion layer distribution. It was found that the carrier density profile and the depletion layer thickness is less regular in the black Si than in the flat emitter, suggesting that this fluctuation may affect the power conversion efficiency of black Si solar cell.",

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author = "Yasuo Cho and Beniamino Iandolo and Ole Hansen",

year = "2022",

doi = "10.1109/PVSC48317.2022.9938925",

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booktitle = "Proceedings of 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC)",

publisher = "IEEE",

address = "United States",

note = "49th IEEE Photovoltaic Specialists Conference, PVSC ; Conference date: 05-06-2022 Through 10-06-2022",

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Cho, Y, Iandolo, B & Hansen, O 2022, Quantitative Measurement of Active Dopant Density Distribution in Black Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy. in Proceedings of 2022 IEEE 49^th Photovoltaics Specialists Conference (PVSC). IEEE, pp. 0461-0463, 49th IEEE Photovoltaic Specialists Conference, Philadelphia, Pennsylvania, United States, 05/06/2022. https://doi.org/10.1109/PVSC48317.2022.9938925

Quantitative Measurement of Active Dopant Density Distribution in Black Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy. / Cho, Yasuo; Iandolo, Beniamino; Hansen, Ole.
Proceedings of 2022 IEEE 49^th Photovoltaics Specialists Conference (PVSC). IEEE, 2022. p. 0461-0463.

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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N2 - We investigated quantitatively the carrier distribution in a phosphorous (P) diffused black Silicon (Si) solar cell using scanning nonlinear dielectric microscopy (SNDM). As a reference, we measured the carrier distribution on a flat Si sample fabricated under the same P diffusion conditions. The precise carrier distributions in the emitter were visualized, which revealed the feature of carrier distribution in the emitter of black Si solar cell. Super-higher-order-SNDM was also employed to perform a quantitative analysis of the depletion layer distribution. It was found that the carrier density profile and the depletion layer thickness is less regular in the black Si than in the flat emitter, suggesting that this fluctuation may affect the power conversion efficiency of black Si solar cell.

AB - We investigated quantitatively the carrier distribution in a phosphorous (P) diffused black Silicon (Si) solar cell using scanning nonlinear dielectric microscopy (SNDM). As a reference, we measured the carrier distribution on a flat Si sample fabricated under the same P diffusion conditions. The precise carrier distributions in the emitter were visualized, which revealed the feature of carrier distribution in the emitter of black Si solar cell. Super-higher-order-SNDM was also employed to perform a quantitative analysis of the depletion layer distribution. It was found that the carrier density profile and the depletion layer thickness is less regular in the black Si than in the flat emitter, suggesting that this fluctuation may affect the power conversion efficiency of black Si solar cell.

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KW - Carrier profiling

KW - Depletion layer

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KW - Super-higher-order scanning nonlinear dielectric microscopy

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ER -

Quantitative Measurement of Active Dopant Density Distribution in Black Silicon Solar Cell Using Scanning Nonlinear Dielectric Microscopy

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