Quantifying non-uniform InP-on-Si wafer expansion with a sub-50 nm precision using E-beam metrology

Aurimas Sakanas; Yi Yu; Elizaveta Semenova; Luisa Ottaviano; Hitesh Kumar Sahoo; Jesper Mørk

Quantifying non-uniform InP-on-Si wafer expansion with a sub-50 nm precision using E-beam metrology

Aurimas Sakanas
, Yi Yu
, Elizaveta Semenova
, Luisa Ottaviano
, Hitesh Kumar Sahoo
, Jesper Mørk

Research output: Contribution to conference › Conference abstract for conference › Research › peer-review

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Abstract

The non-uniform expansion of InP layers bonded directly and with the adhesive-BCB to 2” silicon substrates is quantified and compared on a 2” wafer-scale by using E-beam as metrology tool with a sub-50 nm precision.

Original language	English
Publication date	2018
Publication status	Published - 2018
Event	44th International Conference on Micro and NanoEngineering - Copenhagen, Denmark Duration: 24 Sept 2018 → 27 Sept 2018 Conference number: 44

Conference

Conference	44th International Conference on Micro and NanoEngineering
Number	44
Country/Territory	Denmark
City	Copenhagen
Period	24/09/2018 → 27/09/2018

Keywords

Electron beam lithography
Metrology
Wafer bonding
Photonic crystal laser

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@conference{f489b4cd77034e1c816450200c5c7e63,

title = "Quantifying non-uniform InP-on-Si wafer expansion with a sub-50 nm precision using E-beam metrology",

abstract = "The non-uniform expansion of InP layers bonded directly and with the adhesive-BCB to 2{\textquotedblright} silicon substrates is quantified and compared on a 2{\textquotedblright} wafer-scale by using E-beam as metrology tool with a sub-50 nm precision.",

keywords = "Electron beam lithography, Metrology, Wafer bonding, Photonic crystal laser",

author = "Aurimas Sakanas and Yi Yu and Elizaveta Semenova and Luisa Ottaviano and Sahoo, \{Hitesh Kumar\} and Jesper M{\o}rk",

year = "2018",

language = "English",

note = "44th International Conference on Micro and NanoEngineering ; Conference date: 24-09-2018 Through 27-09-2018",

}

TY - ABST

T1 - Quantifying non-uniform InP-on-Si wafer expansion with a sub-50 nm precision using E-beam metrology

AU - Sakanas, Aurimas

AU - Yu, Yi

AU - Semenova, Elizaveta

AU - Ottaviano, Luisa

AU - Sahoo, Hitesh Kumar

AU - Mørk, Jesper

N1 - Conference code: 44

PY - 2018

Y1 - 2018

N2 - The non-uniform expansion of InP layers bonded directly and with the adhesive-BCB to 2” silicon substrates is quantified and compared on a 2” wafer-scale by using E-beam as metrology tool with a sub-50 nm precision.

AB - The non-uniform expansion of InP layers bonded directly and with the adhesive-BCB to 2” silicon substrates is quantified and compared on a 2” wafer-scale by using E-beam as metrology tool with a sub-50 nm precision.

KW - Electron beam lithography

KW - Metrology

KW - Wafer bonding

KW - Photonic crystal laser

M3 - Conference abstract for conference

T2 - 44th International Conference on Micro and NanoEngineering

Y2 - 24 September 2018 through 27 September 2018

ER -

Quantifying non-uniform InP-on-Si wafer expansion with a sub-50 nm precision using E-beam metrology

Abstract

Conference

Keywords

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