Quantifying non-uniform InP-on-Si wafer expansion with a sub-50 nm precision using E-beam metrology

Aurimas Sakanas, Yi Yu, Elizaveta Semenova, Luisa Ottaviano, Hitesh Kumar Sahoo, Jesper Mørk

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    Abstract

    The non-uniform expansion of InP layers bonded directly and with the adhesive-BCB to 2” silicon substrates is quantified and compared on a 2” wafer-scale by using E-beam as metrology tool with a sub-50 nm precision.
    Original languageEnglish
    Publication date2018
    Publication statusPublished - 2018
    Event44th International Conference on Micro and NanoEngineering - Copenhagen, Denmark
    Duration: 24 Sept 201827 Sept 2018
    Conference number: 44

    Conference

    Conference44th International Conference on Micro and NanoEngineering
    Number44
    Country/TerritoryDenmark
    CityCopenhagen
    Period24/09/201827/09/2018

    Keywords

    • Electron beam lithography
    • Metrology
    • Wafer bonding
    • Photonic crystal laser

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