Quantifying non-uniform InP-on-Si wafer expansion with a sub-50 nm precision using E-beam metrology

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Abstract

The non-uniform expansion of InP layers bonded directly and with the adhesive-BCB to 2” silicon substrates is quantified and compared on a 2” wafer-scale by using E-beam as metrology tool with a sub-50 nm precision.
Original languageEnglish
Publication date2018
Publication statusPublished - 2018
Event44th International Conference on Micro and NanoEngineering - Copenhagen, Denmark
Duration: 24 Sep 201827 Sep 2018

Conference

Conference44th International Conference on Micro and NanoEngineering
CountryDenmark
CityCopenhagen
Period24/09/201827/09/2018

Keywords

  • Electron beam lithography
  • Metrology
  • Wafer bonding
  • Photonic crystal laser

Cite this

Sakanas, A., Yu, Y., Semenova, E., Ottaviano, L., Sahoo, H. K., & Mørk, J. (2018). Quantifying non-uniform InP-on-Si wafer expansion with a sub-50 nm precision using E-beam metrology. Abstract from 44th International Conference on Micro and NanoEngineering, Copenhagen, Denmark.