Abstract
| Original language | English |
|---|---|
| Article number | 78 |
| Journal | Applied Physics A: Materials Science & Processing |
| Volume | 124 |
| Issue number | 1 |
| ISSN | 0947-8396 |
| DOIs | |
| Publication status | Published - 2018 |
Cite this
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Pulsed laser deposition of chalcogenide sulfides from multi- and single-component targets: the non-stoichiometric material transfer. / Schou, Jørgen; Ganskukh, Mungunshagai; Ettlinger, Rebecca Bolt; Cazzaniga, Andrea Carlo; Grossberg, Maarja ; Kauk-Kuusik, Marit ; Canulescu, Stela.
In: Applied Physics A: Materials Science & Processing, Vol. 124, No. 1, 78, 2018.Research output: Contribution to journal › Journal article › Research › peer-review
TY - JOUR
T1 - Pulsed laser deposition of chalcogenide sulfides from multi- and single-component targets: the non-stoichiometric material transfer
AU - Schou, Jørgen
AU - Ganskukh, Mungunshagai
AU - Ettlinger, Rebecca Bolt
AU - Cazzaniga, Andrea Carlo
AU - Grossberg, Maarja
AU - Kauk-Kuusik, Marit
AU - Canulescu, Stela
PY - 2018
Y1 - 2018
N2 - The mass transfer from target to films is incongruent for chalcogenide sulfides in contrast to the expectations of pulsed laser deposition (PLD) as a stoichiometric film growth process. Films produced from a CZTS (Cu2ZnSnS4) multi-component target have no Cu below a fluence threshold of 0.2 J/cm2, and the Cu content is also very low at low fluence from a single-component target. Above this threshold, the Cu content in the films increases almost linearly up to a value above the stoichiometric value, while the ratio of the concentration of the other metals Zn to Sn (Zn/Sn) remains constant. Films of a similar material CTS (Cu2SnS3) have been produced by PLD from a CTS target and exhibits a similar trend in the same fluence region. The results are discussed on the basis of solid-state data and the existing data from the literature.
AB - The mass transfer from target to films is incongruent for chalcogenide sulfides in contrast to the expectations of pulsed laser deposition (PLD) as a stoichiometric film growth process. Films produced from a CZTS (Cu2ZnSnS4) multi-component target have no Cu below a fluence threshold of 0.2 J/cm2, and the Cu content is also very low at low fluence from a single-component target. Above this threshold, the Cu content in the films increases almost linearly up to a value above the stoichiometric value, while the ratio of the concentration of the other metals Zn to Sn (Zn/Sn) remains constant. Films of a similar material CTS (Cu2SnS3) have been produced by PLD from a CTS target and exhibits a similar trend in the same fluence region. The results are discussed on the basis of solid-state data and the existing data from the literature.
U2 - 10.1007/s00339-017-1475-3
DO - 10.1007/s00339-017-1475-3
M3 - Journal article
VL - 124
JO - Applied Physics A: Materials Science & Processing
JF - Applied Physics A: Materials Science & Processing
SN - 0947-8396
IS - 1
M1 - 78
ER -