Abstract
Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.
| Original language | English |
|---|---|
| Publication date | 2004 |
| Publication status | Published - 2004 |
| Event | 19th IEEE International Semiconductor Laser Conference - Matsue, Japan Duration: 21 Sept 2004 → 25 Sept 2004 Conference number: 19 http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=9489 |
Conference
| Conference | 19th IEEE International Semiconductor Laser Conference |
|---|---|
| Number | 19 |
| Country/Territory | Japan |
| City | Matsue |
| Period | 21/09/2004 → 25/09/2004 |
| Internet address |
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