Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers

M.G. Thompson, C. Marinelli, Y. Chu, R.L. Sellin, R.V. Penty, I.H. White, Mike van der Poel, Dan Birkedal, Jørn Märcher Hvam, V.M. Ustinov, M. Lämmlin, D. Bimberg

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Abstract

Saturable absorbers properties are characterised in monolithic mode-locked InGaAs quantum dot lasers. We analyse the impact of weak quantum confined Stark effect, fast absorber recovery time and low absorber saturation power on the mode-locking performance.
Original languageEnglish
Publication date2004
Publication statusPublished - 2004
Event19th IEEE International Semiconductor Laser Conference - Matsue, Japan
Duration: 21 Sep 200425 Sep 2004
Conference number: 19
http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=9489

Conference

Conference19th IEEE International Semiconductor Laser Conference
Number19
CountryJapan
CityMatsue
Period21/09/200425/09/2004
Internet address

Cite this

Thompson, M. G., Marinelli, C., Chu, Y., Sellin, R. L., Penty, R. V., White, I. H., Poel, M. V. D., Birkedal, D., Hvam, J. M., Ustinov, V. M., Lämmlin, M., & Bimberg, D. (2004). Properties of InGaAs quantum dot saturable absorbers in monolithic mode-locked lasers. Abstract from 19th IEEE International Semiconductor Laser Conference, Matsue, Japan.