Properties and etching rates of negative ions in inductively coupled plasmas and dc discharges produced in Ar/SF6

Mihai Draghici, Eugen Stamate

    Research output: Contribution to journalJournal articleResearchpeer-review

    Abstract

    Negative ion production is investigated in a chamber with transversal magnetic filter operated in dc or inductively coupled plasma (ICP) modes in Ar/SF6 gas mixtures. Plasma parameters are evaluated by mass spectrometry and Langmuir probe for different discharge conditions. The density ratio of negative ion to electron exceeded 300 in dc mode while it was below 100 in the ICP mode. The possibility to apply a large positive bias to an electrode without affecting the plasma potential and the transition from a negative sheath to anodic glow are also investigated. The etching rates by positive and negative ions are evaluated on silicon substrate for different Ar/SF6 gas ratios. The etching rate by negative ions was with less than 5% smaller than that by positive ions.
    Original languageEnglish
    JournalJournal of Applied Physics
    Volume107
    Issue number12
    Pages (from-to)123304
    ISSN0021-8979
    DOIs
    Publication statusPublished - 2010

    Keywords

    • Plasma processing
    • Fusion energy

    Cite this

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    title = "Properties and etching rates of negative ions in inductively coupled plasmas and dc discharges produced in Ar/SF6",
    abstract = "Negative ion production is investigated in a chamber with transversal magnetic filter operated in dc or inductively coupled plasma (ICP) modes in Ar/SF6 gas mixtures. Plasma parameters are evaluated by mass spectrometry and Langmuir probe for different discharge conditions. The density ratio of negative ion to electron exceeded 300 in dc mode while it was below 100 in the ICP mode. The possibility to apply a large positive bias to an electrode without affecting the plasma potential and the transition from a negative sheath to anodic glow are also investigated. The etching rates by positive and negative ions are evaluated on silicon substrate for different Ar/SF6 gas ratios. The etching rate by negative ions was with less than 5{\%} smaller than that by positive ions.",
    keywords = "Plasma processing, Fusion energy, Fusionsenergi, Plasmaprocessering",
    author = "Mihai Draghici and Eugen Stamate",
    year = "2010",
    doi = "10.1063/1.3452357",
    language = "English",
    volume = "107",
    pages = "123304",
    journal = "Journal of Applied Physics",
    issn = "0021-8979",
    publisher = "American Institute of Physics",
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    }

    Properties and etching rates of negative ions in inductively coupled plasmas and dc discharges produced in Ar/SF6. / Draghici, Mihai; Stamate, Eugen.

    In: Journal of Applied Physics, Vol. 107, No. 12, 2010, p. 123304.

    Research output: Contribution to journalJournal articleResearchpeer-review

    TY - JOUR

    T1 - Properties and etching rates of negative ions in inductively coupled plasmas and dc discharges produced in Ar/SF6

    AU - Draghici, Mihai

    AU - Stamate, Eugen

    PY - 2010

    Y1 - 2010

    N2 - Negative ion production is investigated in a chamber with transversal magnetic filter operated in dc or inductively coupled plasma (ICP) modes in Ar/SF6 gas mixtures. Plasma parameters are evaluated by mass spectrometry and Langmuir probe for different discharge conditions. The density ratio of negative ion to electron exceeded 300 in dc mode while it was below 100 in the ICP mode. The possibility to apply a large positive bias to an electrode without affecting the plasma potential and the transition from a negative sheath to anodic glow are also investigated. The etching rates by positive and negative ions are evaluated on silicon substrate for different Ar/SF6 gas ratios. The etching rate by negative ions was with less than 5% smaller than that by positive ions.

    AB - Negative ion production is investigated in a chamber with transversal magnetic filter operated in dc or inductively coupled plasma (ICP) modes in Ar/SF6 gas mixtures. Plasma parameters are evaluated by mass spectrometry and Langmuir probe for different discharge conditions. The density ratio of negative ion to electron exceeded 300 in dc mode while it was below 100 in the ICP mode. The possibility to apply a large positive bias to an electrode without affecting the plasma potential and the transition from a negative sheath to anodic glow are also investigated. The etching rates by positive and negative ions are evaluated on silicon substrate for different Ar/SF6 gas ratios. The etching rate by negative ions was with less than 5% smaller than that by positive ions.

    KW - Plasma processing

    KW - Fusion energy

    KW - Fusionsenergi

    KW - Plasmaprocessering

    U2 - 10.1063/1.3452357

    DO - 10.1063/1.3452357

    M3 - Journal article

    VL - 107

    SP - 123304

    JO - Journal of Applied Physics

    JF - Journal of Applied Physics

    SN - 0021-8979

    IS - 12

    ER -