Progress and Perspectives of Atomically Engineered Perovskite Oxide Interfaces for Electronics and Electrocatalysts

Yunzhong Chen*, Robert Green

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

The 2D electron gases (2DEGs) at the surfaces and interfaces of SrTiO3‐based homo‐ and heterostructures provide new opportunities for electronics and spintronics. Herein, the recent progresses in the creation of advanced material systems of conducting oxide interfaces with engineered electronic reconstructions and redox reactions, as well as their characterization by a nondestructive resonant X‐ray reflectivity technique, are summarized. Moreover, the development of modulation‐doped high‐mobility oxide 2DEGs and the magnetic‐proximity‐induced spin‐polarized 2DEGs at oxide interfaces are also discussed. Finally, the perspectives on design of conducting oxide interfaces for a new generation of quantum devices and mixed electronic and ionic conducting electrocatalysts are addressed. Atomically engineered oxide interfaces will represent a unique family of quantum materials for future information and energy technologies.
Original languageEnglish
Article number1900547
JournalAdvanced Materials Interfaces
Volume6
Issue number15
Number of pages15
ISSN2196-7350
DOIs
Publication statusPublished - 2019

Keywords

  • 2D electron gases
  • Charge transfer
  • Electronic reconstructions
  • Oxide interfaces
  • Oxygen redox reactions

Cite this

@article{01147cbbf8c0457496f7df92645cb576,
title = "Progress and Perspectives of Atomically Engineered Perovskite Oxide Interfaces for Electronics and Electrocatalysts",
abstract = "The 2D electron gases (2DEGs) at the surfaces and interfaces of SrTiO3‐based homo‐ and heterostructures provide new opportunities for electronics and spintronics. Herein, the recent progresses in the creation of advanced material systems of conducting oxide interfaces with engineered electronic reconstructions and redox reactions, as well as their characterization by a nondestructive resonant X‐ray reflectivity technique, are summarized. Moreover, the development of modulation‐doped high‐mobility oxide 2DEGs and the magnetic‐proximity‐induced spin‐polarized 2DEGs at oxide interfaces are also discussed. Finally, the perspectives on design of conducting oxide interfaces for a new generation of quantum devices and mixed electronic and ionic conducting electrocatalysts are addressed. Atomically engineered oxide interfaces will represent a unique family of quantum materials for future information and energy technologies.",
keywords = "2D electron gases, Charge transfer, Electronic reconstructions, Oxide interfaces, Oxygen redox reactions",
author = "Yunzhong Chen and Robert Green",
year = "2019",
doi = "10.1002/admi.201900547",
language = "English",
volume = "6",
journal = "Advanced Materials Interfaces",
issn = "2196-7350",
publisher = "John Wiley & Sons Ltd",
number = "15",

}

Progress and Perspectives of Atomically Engineered Perovskite Oxide Interfaces for Electronics and Electrocatalysts. / Chen, Yunzhong; Green, Robert.

In: Advanced Materials Interfaces, Vol. 6, No. 15, 1900547, 2019.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Progress and Perspectives of Atomically Engineered Perovskite Oxide Interfaces for Electronics and Electrocatalysts

AU - Chen, Yunzhong

AU - Green, Robert

PY - 2019

Y1 - 2019

N2 - The 2D electron gases (2DEGs) at the surfaces and interfaces of SrTiO3‐based homo‐ and heterostructures provide new opportunities for electronics and spintronics. Herein, the recent progresses in the creation of advanced material systems of conducting oxide interfaces with engineered electronic reconstructions and redox reactions, as well as their characterization by a nondestructive resonant X‐ray reflectivity technique, are summarized. Moreover, the development of modulation‐doped high‐mobility oxide 2DEGs and the magnetic‐proximity‐induced spin‐polarized 2DEGs at oxide interfaces are also discussed. Finally, the perspectives on design of conducting oxide interfaces for a new generation of quantum devices and mixed electronic and ionic conducting electrocatalysts are addressed. Atomically engineered oxide interfaces will represent a unique family of quantum materials for future information and energy technologies.

AB - The 2D electron gases (2DEGs) at the surfaces and interfaces of SrTiO3‐based homo‐ and heterostructures provide new opportunities for electronics and spintronics. Herein, the recent progresses in the creation of advanced material systems of conducting oxide interfaces with engineered electronic reconstructions and redox reactions, as well as their characterization by a nondestructive resonant X‐ray reflectivity technique, are summarized. Moreover, the development of modulation‐doped high‐mobility oxide 2DEGs and the magnetic‐proximity‐induced spin‐polarized 2DEGs at oxide interfaces are also discussed. Finally, the perspectives on design of conducting oxide interfaces for a new generation of quantum devices and mixed electronic and ionic conducting electrocatalysts are addressed. Atomically engineered oxide interfaces will represent a unique family of quantum materials for future information and energy technologies.

KW - 2D electron gases

KW - Charge transfer

KW - Electronic reconstructions

KW - Oxide interfaces

KW - Oxygen redox reactions

U2 - 10.1002/admi.201900547

DO - 10.1002/admi.201900547

M3 - Journal article

VL - 6

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

SN - 2196-7350

IS - 15

M1 - 1900547

ER -