Abstract
| Original language | English |
|---|---|
| Article number | 1900547 |
| Journal | Advanced Materials Interfaces |
| Volume | 6 |
| Issue number | 15 |
| Number of pages | 15 |
| ISSN | 2196-7350 |
| DOIs | |
| Publication status | Published - 2019 |
Keywords
- 2D electron gases
- Charge transfer
- Electronic reconstructions
- Oxide interfaces
- Oxygen redox reactions
Cite this
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Progress and Perspectives of Atomically Engineered Perovskite Oxide Interfaces for Electronics and Electrocatalysts. / Chen, Yunzhong; Green, Robert.
In: Advanced Materials Interfaces, Vol. 6, No. 15, 1900547, 2019.Research output: Contribution to journal › Journal article › Research › peer-review
TY - JOUR
T1 - Progress and Perspectives of Atomically Engineered Perovskite Oxide Interfaces for Electronics and Electrocatalysts
AU - Chen, Yunzhong
AU - Green, Robert
PY - 2019
Y1 - 2019
N2 - The 2D electron gases (2DEGs) at the surfaces and interfaces of SrTiO3‐based homo‐ and heterostructures provide new opportunities for electronics and spintronics. Herein, the recent progresses in the creation of advanced material systems of conducting oxide interfaces with engineered electronic reconstructions and redox reactions, as well as their characterization by a nondestructive resonant X‐ray reflectivity technique, are summarized. Moreover, the development of modulation‐doped high‐mobility oxide 2DEGs and the magnetic‐proximity‐induced spin‐polarized 2DEGs at oxide interfaces are also discussed. Finally, the perspectives on design of conducting oxide interfaces for a new generation of quantum devices and mixed electronic and ionic conducting electrocatalysts are addressed. Atomically engineered oxide interfaces will represent a unique family of quantum materials for future information and energy technologies.
AB - The 2D electron gases (2DEGs) at the surfaces and interfaces of SrTiO3‐based homo‐ and heterostructures provide new opportunities for electronics and spintronics. Herein, the recent progresses in the creation of advanced material systems of conducting oxide interfaces with engineered electronic reconstructions and redox reactions, as well as their characterization by a nondestructive resonant X‐ray reflectivity technique, are summarized. Moreover, the development of modulation‐doped high‐mobility oxide 2DEGs and the magnetic‐proximity‐induced spin‐polarized 2DEGs at oxide interfaces are also discussed. Finally, the perspectives on design of conducting oxide interfaces for a new generation of quantum devices and mixed electronic and ionic conducting electrocatalysts are addressed. Atomically engineered oxide interfaces will represent a unique family of quantum materials for future information and energy technologies.
KW - 2D electron gases
KW - Charge transfer
KW - Electronic reconstructions
KW - Oxide interfaces
KW - Oxygen redox reactions
U2 - 10.1002/admi.201900547
DO - 10.1002/admi.201900547
M3 - Journal article
VL - 6
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
SN - 2196-7350
IS - 15
M1 - 1900547
ER -