Process-induced defects in NTD-silicon

K. Bonde Nielsen, B. Bech Nielsen, K. Dyrbye, K. Heydorn

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    Original languageEnglish
    Title of host publicationAnnual Report 1990. Institute of Physics. Aarhus University
    Place of PublicationÅrhus
    PublisherInstitute of Physics. Aarhus University
    Publication date1991
    Pages61-62
    Publication statusPublished - 1991

    Cite this

    Bonde Nielsen, K., Bech Nielsen, B., Dyrbye, K., & Heydorn, K. (1991). Process-induced defects in NTD-silicon. In Annual Report 1990. Institute of Physics. Aarhus University (pp. 61-62). Institute of Physics. Aarhus University.