Preservation of atomically clean silicon surfaces in air by contact bonding

Francois Grey, Karin Ljungberg

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    Abstract

    When two hydrogen-passivated silicon surfaces are placed in contact under cleanroom conditions, a weak bond is formed. Cleaving this bond under ultrahigh vacuum (UHV) conditions, and observing the surfaces with low energy electron diffraction and scanning tunneling microscopy, we find that the ordered atomic structure of the surfaces is protected from oxidation, even after the bonded samples have been in air for weeks. Further, we show that silicon surfaces that have been cleaned and hydrogen-passivated in UHV can be contacted in UHV in a similarly hermetic fashion, protecting the surface reconstruction from oxidation in air, Contact bonding opens the way to novel applications of reconstructed semiconductor surfaces, by preserving their atomic structure intact outside of a UHV chamber. (C) 1997 American Institute of Physics.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume71
    Issue number23
    Pages (from-to)3400-3402
    ISSN0003-6951
    DOIs
    Publication statusPublished - 1997

    Bibliographical note

    Copyright (1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Keywords

    • HF
    • GAAS
    • SI(111)
    • SPECTROSCOPY
    • HYDROGEN
    • MORPHOLOGY

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