Preparation of a Novel Ce_0.9La_0.1O₂/Gd₂Zr₂O₇ Buffer Layer Stack on NiW Alloy Substrates by the MOD Route

An optimized buffer layer architecture prepared by a metal organic deposition method on biaxially textured metallic substrate is proposed and developed successfully. The major achievement of this work is to choose a ${\rm Ce}_{0.9}{\rm La}_{0.1}{\rm O}_{2}$ layer as cap layer that possesses an excellent lattice match with the superconductor layer, and to employ 200 nm thick ${\rm Gd}_{2}{\rm Zr}_{2}{\rm O}_{7}$ film as barrier layer. The effect of thermal cycling on the texture and morphology of the crystallized films and NiW substrate is discussed in detail. The texture quality and the epitaxial relationship between the buffer layer stack and the metallic substrate were studied by synchrotron x-ray diffraction. Well textured, smooth and crack-free ${\rm Ce}_{0.9}{\rm La}_{0.1}{\rm O}_{2}/{\rm Gd}_{2}{\rm Zr}_{2}{\rm O}_{7}$ buffer layer stacks are obtained, demonstrating the possibility of producing a high quality buffer layer stack by a low cost chemical solution deposition route.