Abstract
CuS films were prepared by spray pyrolysis from solutions of (NH2)(2)CS and CuCl2 center dot 2H(2)O mixed at ratios of 3:1, 4:1 and 5:1 on glass substrates heated at 160 to 240 degrees C. The deposition temperatures and pulsed regime of spray were controlled with the help of electronic equipments. The resistivity, phase composition, morphology, band gap energy and type of conductivity of the films were characterized using volt-ampere, XRD, SEM, optical absorption and Hall effect measurements. It was found that for all ratios of precursors the low resistivity of the films was stably obtained at substrate temperatures from 170 to 220 degrees C. Among them the lowest sheet resistivity of the films reached value of 8 ohm/sqr. The influences of deposition temperature and material ratio on characteristics of the spray deposited CuS films were discussed.
| Original language | English |
|---|---|
| Journal | Chalcogenide Letters |
| Volume | 9 |
| Issue number | 10 |
| Pages (from-to) | 397-402 |
| ISSN | 1841-4834 |
| Publication status | Published - 2012 |
| Externally published | Yes |
Keywords
- MATERIALS
- PHYSICS
- CU2S THIN-FILMS
- DEPOSITION TECHNIQUE
- OPTICAL-PROPERTIES
- LAYERS