Preparation and characterisation of Os doped MgB2

Jean-Claude Grivel; Shahla Namazkar; Aikaterini Alexiou; Olfert Joakim Holte

doi:10.1016/j.physc.2014.10.010

Preparation and characterisation of Os doped MgB₂

Jean-Claude Grivel, Shahla Namazkar, Aikaterini Alexiou, Olfert Joakim Holte

Department of Energy Conversion and Storage

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

Polycrystalline samples with Mg_1-xOs_xB_2.04 nominal stoichiometry were made by reacting elemental powders at 800 °C under argon atmosphere. Based on XRD diffraction patterns, EDS analysis and magnetisation measurements, it is found that Os can replace up to about 1 at.% Mg in the MgB₂ lattice. Beyond this doping level, unreacted Os and Mg-rich Mg-Os impurity phases are formed. The a-axis parameter contracts upon doping while the superconducting transition temperature decreases at a rate of 2.1 K/at.% Os substitution. At 10 K, Os doping induces an improvement of the normalised critical current density under applied magnetic fields in excess of 0.5 T, indicating a modest enhancement of flux pinning in this range.

Original language	English
Journal	Physica C: Superconductivity and its Applications
Volume	507
Pages (from-to)	70-74
Number of pages	5
ISSN	0921-4534
DOIs	https://doi.org/10.1016/j.physc.2014.10.010
Publication status	Published - 2014

Keywords

Doping
MgB2
Osmium
Doping (additives)
Magnesium
Superconducting transition temperature
Applied magnetic fields
Argon atmospheres
Doping levels
EDS analysis
Elemental powders
Impurity phasis
Polycrystalline samples

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title = "Preparation and characterisation of Os doped MgB2",

abstract = "Polycrystalline samples with Mg1-xOsxB2.04 nominal stoichiometry were made by reacting elemental powders at 800 °C under argon atmosphere. Based on XRD diffraction patterns, EDS analysis and magnetisation measurements, it is found that Os can replace up to about 1 at.% Mg in the MgB2 lattice. Beyond this doping level, unreacted Os and Mg-rich Mg-Os impurity phases are formed. The a-axis parameter contracts upon doping while the superconducting transition temperature decreases at a rate of 2.1 K/at.% Os substitution. At 10 K, Os doping induces an improvement of the normalised critical current density under applied magnetic fields in excess of 0.5 T, indicating a modest enhancement of flux pinning in this range.",

keywords = "Doping, MgB2, Osmium, Doping (additives), Magnesium, Superconducting transition temperature, Applied magnetic fields, Argon atmospheres, Doping levels, EDS analysis, Elemental powders, Impurity phasis, Polycrystalline samples",

author = "Jean-Claude Grivel and Shahla Namazkar and Aikaterini Alexiou and Holte, {Olfert Joakim}",

year = "2014",

doi = "10.1016/j.physc.2014.10.010",

language = "English",

volume = "507",

pages = "70--74",

journal = "Physica C: Superconductivity and its Applications",

issn = "0921-4534",

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T1 - Preparation and characterisation of Os doped MgB2

AU - Grivel, Jean-Claude

AU - Namazkar, Shahla

AU - Alexiou, Aikaterini

AU - Holte, Olfert Joakim

PY - 2014

Y1 - 2014

N2 - Polycrystalline samples with Mg1-xOsxB2.04 nominal stoichiometry were made by reacting elemental powders at 800 °C under argon atmosphere. Based on XRD diffraction patterns, EDS analysis and magnetisation measurements, it is found that Os can replace up to about 1 at.% Mg in the MgB2 lattice. Beyond this doping level, unreacted Os and Mg-rich Mg-Os impurity phases are formed. The a-axis parameter contracts upon doping while the superconducting transition temperature decreases at a rate of 2.1 K/at.% Os substitution. At 10 K, Os doping induces an improvement of the normalised critical current density under applied magnetic fields in excess of 0.5 T, indicating a modest enhancement of flux pinning in this range.

AB - Polycrystalline samples with Mg1-xOsxB2.04 nominal stoichiometry were made by reacting elemental powders at 800 °C under argon atmosphere. Based on XRD diffraction patterns, EDS analysis and magnetisation measurements, it is found that Os can replace up to about 1 at.% Mg in the MgB2 lattice. Beyond this doping level, unreacted Os and Mg-rich Mg-Os impurity phases are formed. The a-axis parameter contracts upon doping while the superconducting transition temperature decreases at a rate of 2.1 K/at.% Os substitution. At 10 K, Os doping induces an improvement of the normalised critical current density under applied magnetic fields in excess of 0.5 T, indicating a modest enhancement of flux pinning in this range.

KW - Doping

KW - MgB2

KW - Osmium

KW - Doping (additives)

KW - Magnesium

KW - Superconducting transition temperature

KW - Applied magnetic fields

KW - Argon atmospheres

KW - Doping levels

KW - EDS analysis

KW - Elemental powders

KW - Impurity phasis

KW - Polycrystalline samples

U2 - 10.1016/j.physc.2014.10.010

DO - 10.1016/j.physc.2014.10.010

M3 - Journal article

SN - 0921-4534

VL - 507

SP - 70

EP - 74

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

ER -