Practical investigation of the gate bias effect on the reverse recovery behavior of the body diode in power MOSFETs

Kristian Lindberg-Poulsen, Lars Press Petersen, Ziwei Ouyang, Michael A. E. Andersen

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

This work considers an alternative method of reducing the body diode reverse recovery by taking advantage of the MOSFET body effect, and applying a bias voltage to the gate before reverse recovery. A test method is presented, allowing the accurate measurement of voltage and current waveforms during reverse recovery at high di=dt. Different bias voltages and dead times are combined, giving a loss map which makes it possible to evaluate the practical efficacy of gate bias on reducing the MOSFET body diode reverse recovery, while comparing it to the well known methods of dead time optimization. A selection of 60V devices for synchronous rectification are compared for their suitability for gate bias, while a selection of 600V devices are compared for the efficacy of gate bias for the zero voltage transition converter application. The results show that many of the tested devices benefit from greatly reduced reverse recovery after the application of gate bias.
Original languageEnglish
Title of host publicationProceedings of The 2014 International Power Electronics Conference
PublisherIEEE
Publication date2014
Pages2842-2849
ISBN (Print)9781479927050
DOIs
Publication statusPublished - 2014
EventIPEC 2014 : 2014 International Power Electronics Conference - Hiroshima, Japan
Duration: 18 May 201421 May 2014

Conference

ConferenceIPEC 2014
CountryJapan
CityHiroshima
Period18/05/201421/05/2014

Keywords

  • Body diode
  • Body effect
  • MOSFET
  • Reverse recovery

Fingerprint Dive into the research topics of 'Practical investigation of the gate bias effect on the reverse recovery behavior of the body diode in power MOSFETs'. Together they form a unique fingerprint.

Cite this