Power Flow Models of GaN Based Partial Parallel Dual Active Bridge (P2DAB) DC-DC Converter

Yudi Xiao, Zhe Zhang, Michael A. E. Andersen

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    Abstract

    This paper presents a lossless power flow model and an improved power flow model of the Partial Parallel Dual Active Bridge (P2DAB) dc-dc converter with single-phase-shift modulation (SPSM). The improved model considers the dead time and the parasitic elements. A GaN based P2DAB converter prototype is built to verify the
    models. The lossless model is more accurate than the other at small phase shift region, while the improved one is more accurate at medium and large phase shift region. The cause of the errors are discussed, and the solution to improve the accuracy is provided. Moreover, the improved model provides more details about the power flow characteristics than the lossless model.
    Original languageEnglish
    Title of host publicationProceedings of 2nd IEEE International Power Electronics and Application Conference and Exposition
    Number of pages7
    PublisherIEEE
    Publication date2018
    ISBN (Print)978-1-5386-6054-6
    DOIs
    Publication statusPublished - 2018
    Event2nd IEEE International Power Electronics and Application Conference and Exposition - Crowne Plaza Shenzhen Longgang City Centre, Shenzhen, China
    Duration: 4 Nov 20187 Nov 2018
    Conference number: 2
    http://www.peac-conf.org/Home/Default

    Conference

    Conference2nd IEEE International Power Electronics and Application Conference and Exposition
    Number2
    LocationCrowne Plaza Shenzhen Longgang City Centre
    Country/TerritoryChina
    CityShenzhen
    Period04/11/201807/11/2018
    OtherTopic Chair of IEEE PEAC 2018
    Internet address

    Keywords

    • Power flow model
    • Dual active bridge converter
    • GaN

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