Power Flow Models of GaN Based Partial Parallel Dual Active Bridge (P2DAB) DC-DC Converter

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Abstract

This paper presents a lossless power flow model and an improved power flow model of the Partial Parallel Dual Active Bridge (P2DAB) dc-dc converter with single-phase-shift modulation (SPSM). The improved model considers the dead time and the parasitic elements. A GaN based P2DAB converter prototype is built to verify the
models. The lossless model is more accurate than the other at small phase shift region, while the improved one is more accurate at medium and large phase shift region. The cause of the errors are discussed, and the solution to improve the accuracy is provided. Moreover, the improved model provides more details about the power flow characteristics than the lossless model.
Original languageEnglish
Title of host publicationProceedings of 2nd IEEE International Power Electronics and Application Conference and Exposition
Number of pages7
PublisherIEEE
Publication date2018
ISBN (Print)978-1-5386-6054-6
DOIs
Publication statusPublished - 2018
Event2nd IEEE International Power Electronics and Application Conference and Exposition - Crowne Plaza Shenzhen Longgang City Centre, Shenzhen, China
Duration: 4 Nov 20187 Nov 2018
Conference number: 2
http://www.peac-conf.org/
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Conference

Conference2nd IEEE International Power Electronics and Application Conference and Exposition
Number2
LocationCrowne Plaza Shenzhen Longgang City Centre
CountryChina
CityShenzhen
Period04/11/201807/11/2018
OtherTopic Chair of IEEE PEAC 2018
Internet address

Keywords

  • Power flow model
  • Dual active bridge converter
  • GaN

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