Potential controlled stripping of an amorphous As layer on GaAs(001) in an electrolyte: An in situ x-ray scattering study

G. Scherb; A. Kazimirov; J. Zegenhagen; T.M. Schultz; R. Feidenhans'l; B.O. Fimland

doi:10.1063/1.120239

Potential controlled stripping of an amorphous As layer on GaAs(001) in an electrolyte: An in situ x-ray scattering study

G. Scherb, A. Kazimirov, J. Zegenhagen, T.M. Schultz, R. Feidenhans'l, B.O. Fimland

Research output: Contribution to journal › Journal article › Research

Abstract

We demonstrate that an amorphous As layer deposited as protection on a GaAs(001) surface frown by molecular beam epitaxy can be removed via reductive etching in an electrolytical cell at sufficiently negative electrode potentials. Employing a specially constructed electrochemical cell filled with H2SO4. we monitored the stripping process of the 50 nm As cap over a period of hours in situ with x-ray diffraction. Our results suggest that, using this potential controlled stripping, smooth and well ordered GaAs(001) surfaces can be obtained in an aqueous electrolyte. (C) 1997 American Institute of Physics.

Original language	English
Journal	Applied Physics Letters
Volume	71
Issue number	20
Pages (from-to)	2990-2992
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.120239
Publication status	Published - 1997

Access to Document

10.1063/1.120239

OpenUrl availability

Full text

Cite this

@article{29d8cf8e500546a3a58c011daf556c78,

title = "Potential controlled stripping of an amorphous As layer on GaAs(001) in an electrolyte: An in situ x-ray scattering study",

abstract = "We demonstrate that an amorphous As layer deposited as protection on a GaAs(001) surface frown by molecular beam epitaxy can be removed via reductive etching in an electrolytical cell at sufficiently negative electrode potentials. Employing a specially constructed electrochemical cell filled with H2SO4. we monitored the stripping process of the 50 nm As cap over a period of hours in situ with x-ray diffraction. Our results suggest that, using this potential controlled stripping, smooth and well ordered GaAs(001) surfaces can be obtained in an aqueous electrolyte. (C) 1997 American Institute of Physics. ",

keywords = "Nye funktionelle materialer",

author = "G. Scherb and A. Kazimirov and J. Zegenhagen and T.M. Schultz and R. Feidenhans'l and B.O. Fimland",

year = "1997",

doi = "10.1063/1.120239",

language = "English",

volume = "71",

pages = "2990--2992",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Potential controlled stripping of an amorphous As layer on GaAs(001) in an electrolyte: An in situ x-ray scattering study

AU - Scherb, G.

AU - Kazimirov, A.

AU - Zegenhagen, J.

AU - Schultz, T.M.

AU - Feidenhans'l, R.

AU - Fimland, B.O.

PY - 1997

Y1 - 1997

N2 - We demonstrate that an amorphous As layer deposited as protection on a GaAs(001) surface frown by molecular beam epitaxy can be removed via reductive etching in an electrolytical cell at sufficiently negative electrode potentials. Employing a specially constructed electrochemical cell filled with H2SO4. we monitored the stripping process of the 50 nm As cap over a period of hours in situ with x-ray diffraction. Our results suggest that, using this potential controlled stripping, smooth and well ordered GaAs(001) surfaces can be obtained in an aqueous electrolyte. (C) 1997 American Institute of Physics.

AB - We demonstrate that an amorphous As layer deposited as protection on a GaAs(001) surface frown by molecular beam epitaxy can be removed via reductive etching in an electrolytical cell at sufficiently negative electrode potentials. Employing a specially constructed electrochemical cell filled with H2SO4. we monitored the stripping process of the 50 nm As cap over a period of hours in situ with x-ray diffraction. Our results suggest that, using this potential controlled stripping, smooth and well ordered GaAs(001) surfaces can be obtained in an aqueous electrolyte. (C) 1997 American Institute of Physics.

KW - Nye funktionelle materialer

U2 - 10.1063/1.120239

DO - 10.1063/1.120239

M3 - Journal article

SN - 0003-6951

VL - 71

SP - 2990

EP - 2992

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Potential controlled stripping of an amorphous As layer on GaAs(001) in an electrolyte: An in situ x-ray scattering study

Abstract

Access to Document

OpenUrl availability

Fingerprint

Cite this