Positron-trapping mechanism at dislocations in Zn

Carlos Hidalgo, Søren Linderoth, Nieves de Diego

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Abstract

The evolution of the positron-lifetime parameters with the measuring temperature has been studied in deformed Zn in the temperature range 12–210 K. For two samples with different degrees of deformation the presence of a component with a lifetime close to that in a monovacancy is observed. Both the average lifetime and the intensity of the long component decrease with increasing temperature. The experimental results are very well described in terms of a generalized trapping model where it is assumed that positrons become trapped in deep traps (jogs) via shallow traps (dislocation lines). The temperature dependence of the positron-lifetime spectra below 120 K is attributed to the temperature dependence of the trapping rate to the dislocation line. The experimental results have demonstrated that detrapping processes from the dislocation line take place above 120 K. The positron binding energy to the dislocation line has been shown to be 40±20 meV.
Original languageEnglish
JournalPhysical Review B
Volume36
Issue number13
Pages (from-to)6740-6745
ISSN2469-9950
DOIs
Publication statusPublished - 1987

Bibliographical note

Copyright (1987) by the American Physical Society.

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