Polycrystalline SiC as source material for the growth of fluorescent SiC layers

M. Kaiser; T. Hupfer; V. Jokubavicus; S. Schimmel; M. Syväjärvi; Yiyu Ou; Haiyan Ou; M. K. Linnarsson; P. Wellmann

doi:10.4028/www.scientific.net/MSF.740-742.39

Polycrystalline SiC as source material for the growth of fluorescent SiC layers

M. Kaiser
, T. Hupfer
, V. Jokubavicus
, S. Schimmel
, M. Syväjärvi
, Yiyu Ou
, Haiyan Ou
, M. K. Linnarsson
, P. Wellmann

Friedrich-Alexander University Erlangen-Nürnberg
Linköping University
KTH Royal Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2012
Publication date	2013
Pages	39-42
ISBN (Print)	9783037856246
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.740-742.39
Publication status	Published - 2013
Event	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012) - Saint-Petersburg, Russian Federation Duration: 2 Sept 2012 → 6 Sept 2012 https://www.ecscrm-2012.org/

Conference

Conference	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Country/Territory	Russian Federation
City	Saint-Petersburg
Period	02/09/2012 → 06/09/2012
Internet address	https://www.ecscrm-2012.org/

Series	Materials Science Forum
ISSN	0255-5476

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@inproceedings{97aca389101a4853aae563f2414d2531,

title = "Polycrystalline SiC as source material for the growth of fluorescent SiC layers",

abstract = "Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.",

author = "M. Kaiser and T. Hupfer and V. Jokubavicus and S. Schimmel and M. Syv{\"a}j{\"a}rvi and Yiyu Ou and Haiyan Ou and Linnarsson, \{M. K.\} and P. Wellmann",

year = "2013",

doi = "10.4028/www.scientific.net/MSF.740-742.39",

language = "English",

isbn = "9783037856246",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

pages = "39--42",

booktitle = "Silicon Carbide and Related Materials 2012",

note = "European Conference on Silicon Carbide and Related Materials (ECSCRM 2012) ; Conference date: 02-09-2012 Through 06-09-2012",

url = "https://www.ecscrm-2012.org/",

}

Kaiser, M, Hupfer, T, Jokubavicus, V, Schimmel, S, Syväjärvi, M, Ou, Y , Ou, H, Linnarsson, MK & Wellmann, P 2013, Polycrystalline SiC as source material for the growth of fluorescent SiC layers. in Silicon Carbide and Related Materials 2012. Materials Science Forum, pp. 39-42, European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Saint-Petersburg, Russian Federation, 02/09/2012. https://doi.org/10.4028/www.scientific.net/MSF.740-742.39

TY - GEN

T1 - Polycrystalline SiC as source material for the growth of fluorescent SiC layers

AU - Kaiser, M.

AU - Hupfer, T.

AU - Jokubavicus, V.

AU - Schimmel, S.

AU - Syväjärvi, M.

AU - Ou, Yiyu

AU - Ou, Haiyan

AU - Linnarsson, M. K.

AU - Wellmann, P.

PY - 2013

Y1 - 2013

N2 - Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.

AB - Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.

U2 - 10.4028/www.scientific.net/MSF.740-742.39

DO - 10.4028/www.scientific.net/MSF.740-742.39

M3 - Article in proceedings

SN - 9783037856246

T3 - Materials Science Forum

SP - 39

EP - 42

BT - Silicon Carbide and Related Materials 2012

T2 - European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)

Y2 - 2 September 2012 through 6 September 2012

ER -

Polycrystalline SiC as source material for the growth of fluorescent SiC layers

Abstract

Conference

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