Polycrystalline SiC as source material for the growth of fluorescent SiC layers

M. Kaiser, T. Hupfer, V. Jokubavicus, S. Schimmel, M. Syväjärvi, Yiyu Ou, Haiyan Ou, M. K. Linnarsson, P. Wellmann

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.
Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2012
Publication date2013
Pages39-42
ISBN (Print)9783037856246
DOIs
Publication statusPublished - 2013
EventEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2012) - Saint-Petersburg, Russian Federation
Duration: 2 Sep 20126 Sep 2012
https://www.ecscrm-2012.org/

Conference

ConferenceEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
CountryRussian Federation
CitySaint-Petersburg
Period02/09/201206/09/2012
Internet address
SeriesMaterials Science Forum
Volume740-742
ISSN0255-5476

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