Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.
|Title of host publication||Silicon Carbide and Related Materials 2012|
|Publication status||Published - 2013|
|Event||European Conference on Silicon Carbide and Related Materials (ECSCRM 2012) - Saint-Petersburg, Russian Federation|
Duration: 2 Sep 2012 → 6 Sep 2012
|Conference||European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)|
|Period||02/09/2012 → 06/09/2012|
|Series||Materials Science Forum|