Polycrystalline SiC as source material for the growth of fluorescent SiC layers

M. Kaiser, T. Hupfer, V. Jokubavicus, S. Schimmel, M. Syväjärvi, Yiyu Ou, Haiyan Ou, M. K. Linnarsson, P. Wellmann

Research output: Contribution to conferenceConference abstract for conferenceResearchpeer-review

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Original languageEnglish
Publication date2012
Number of pages2
Publication statusPublished - 2012
EventEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2012) - Saint-Petersburg, Russian Federation
Duration: 2 Sep 20126 Sep 2012
https://www.ecscrm-2012.org/

Conference

ConferenceEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
CountryRussian Federation
CitySaint-Petersburg
Period02/09/201206/09/2012
Internet address

Cite this

Kaiser, M., Hupfer, T., Jokubavicus, V., Schimmel, S., Syväjärvi, M., Ou, Y., Ou, H., Linnarsson, M. K., & Wellmann, P. (2012). Polycrystalline SiC as source material for the growth of fluorescent SiC layers. Abstract from European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Saint-Petersburg, Russian Federation.