Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications

E. Katsia; N. Huby; G. Tallarida; B. Kutrzeba-Kotowska; M. Perego; S. Ferrari; Frederik C Krebs; E. Guziewicz; M. Godlewski; V. Osinniy; G. Luka

doi:10.1063/1.3114442

Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications

E. Katsia
, N. Huby
, G. Tallarida
, B. Kutrzeba-Kotowska
, M. Perego
, S. Ferrari
, Frederik C Krebs
, E. Guziewicz
, M. Godlewski
, V. Osinniy
, G. Luka

Laboratorio Nazionale MDM
Polish Academy of Sciences

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of nearly 105 at ±4 V and a current density of 104 A/cm2. Electrical characteristics are discussed taking into account the chemical structure of the stack and the energy band diagram. ©2009 American Institute of Physics

Original language	English
Journal	Applied Physics Letters
Volume	94
Issue number	14
Pages (from-to)	143501
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.3114442
Publication status	Published - 2009

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Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Keywords

Solar energy

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10.1063/1.3114442

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title = "Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications",

abstract = "Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of nearly 105 at ±4 V and a current density of 104 A/cm2. Electrical characteristics are discussed taking into account the chemical structure of the stack and the energy band diagram. {\textcopyright}2009 American Institute of Physics",

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note = "Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

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language = "English",

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AU - Katsia, E.

AU - Huby, N.

AU - Tallarida, G.

AU - Kutrzeba-Kotowska, B.

AU - Perego, M.

AU - Ferrari, S.

AU - Krebs, Frederik C

AU - Guziewicz, E.

AU - Godlewski, M.

AU - Osinniy, V.

AU - Luka, G.

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PY - 2009

Y1 - 2009

N2 - Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of nearly 105 at ±4 V and a current density of 104 A/cm2. Electrical characteristics are discussed taking into account the chemical structure of the stack and the energy band diagram. ©2009 American Institute of Physics

AB - Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of nearly 105 at ±4 V and a current density of 104 A/cm2. Electrical characteristics are discussed taking into account the chemical structure of the stack and the energy band diagram. ©2009 American Institute of Physics

KW - Solar energy

KW - Solenergi

U2 - 10.1063/1.3114442

DO - 10.1063/1.3114442

M3 - Journal article

SN - 0003-6951

VL - 94

SP - 143501

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications

Abstract

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