Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications

E. Katsia, N. Huby, G. Tallarida, B. Kutrzeba-Kotowska, M. Perego, S. Ferrari, Frederik C Krebs, E. Guziewicz, M. Godlewski, V. Osinniy, G. Luka

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    Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of nearly 105 at ±4 V and a current density of 104 A/cm2. Electrical characteristics are discussed taking into account the chemical structure of the stack and the energy band diagram. ©2009 American Institute of Physics
    Original languageEnglish
    JournalApplied Physics Letters
    Issue number14
    Pages (from-to)143501
    Publication statusPublished - 2009

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    Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.


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