Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications

E. Katsia, N. Huby, G. Tallarida, B. Kutrzeba-Kotowska, M. Perego, S. Ferrari, Frederik C Krebs, E. Guziewicz, M. Godlewski, V. Osinniy, G. Luka

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    Abstract

    Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of nearly 105 at ±4 V and a current density of 104 A/cm2. Electrical characteristics are discussed taking into account the chemical structure of the stack and the energy band diagram. ©2009 American Institute of Physics
    Original languageEnglish
    JournalApplied Physics Letters
    Volume94
    Issue number14
    Pages (from-to)143501
    ISSN0003-6951
    DOIs
    Publication statusPublished - 2009

    Bibliographical note

    Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

    Keywords

    • Solar energy

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