Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications

E. Katsia; N. Huby; G. Tallarida; B. Kutrzeba-Kotowska; M. Perego; S. Ferrari; Frederik C Krebs; E. Guziewicz; M. Godlewski; V. Osinniy; G. Luka

doi:10.1063/1.3114442

Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications

E. Katsia, N. Huby, G. Tallarida, B. Kutrzeba-Kotowska, M. Perego, S. Ferrari, Frederik C Krebs, E. Guziewicz, M. Godlewski, V. Osinniy, G. Luka

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Abstract

Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of nearly 105 at ±4 V and a current density of 104 A/cm2. Electrical characteristics are discussed taking into account the chemical structure of the stack and the energy band diagram. ©2009 American Institute of Physics

Original language	English
Journal	Applied Physics Letters
Volume	94
Issue number	14
Pages (from-to)	143501
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.3114442
Publication status	Published - 2009

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Copyright (2009) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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Solar energy

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http://link.aip.org/link/?APPLAB/94/143501/1

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abstract = "Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of nearly 105 at ±4 V and a current density of 104 A/cm2. Electrical characteristics are discussed taking into account the chemical structure of the stack and the energy band diagram. {\textcopyright}2009 American Institute of Physics",

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AU - Katsia, E.

AU - Huby, N.

AU - Tallarida, G.

AU - Kutrzeba-Kotowska, B.

AU - Perego, M.

AU - Ferrari, S.

AU - Krebs, Frederik C

AU - Guziewicz, E.

AU - Godlewski, M.

AU - Osinniy, V.

AU - Luka, G.

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PY - 2009

Y1 - 2009

N2 - Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of nearly 105 at ±4 V and a current density of 104 A/cm2. Electrical characteristics are discussed taking into account the chemical structure of the stack and the energy band diagram. ©2009 American Institute of Physics

AB - Hybrid poly(3-hexylthiophene)/ZnO devices are investigated as rectifying heterojunctions for microelectronics applications. A low-temperature atomic layer deposition of ZnO on top of poly(3-hexylthiophene) allows the fabrication of diodes featuring a rectification ratio of nearly 105 at ±4 V and a current density of 104 A/cm2. Electrical characteristics are discussed taking into account the chemical structure of the stack and the energy band diagram. ©2009 American Institute of Physics

KW - Solar energy

KW - Solenergi

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DO - 10.1063/1.3114442

M3 - Journal article

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ER -

Poly(3-hexylthiophene)/ZnO hybrid pn junctions for microelectronics applications

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