Polarization dependence of the electroabsorption in low-temperature grown GaAs for above band-gap energies

M. Ruff; D. Streb; S. U. Dankowski; S. Tautz; P. Kiesel; B. Knüpfer; M. Kneissl; N. Linder; G. H. Döhler; Ulrich Dieter Felix Keil

doi:10.1063/1.116371

Polarization dependence of the electroabsorption in low-temperature grown GaAs for above band-gap energies

M. Ruff
, D. Streb
, S. U. Dankowski
, S. Tautz
, P. Kiesel
, B. Knüpfer
, M. Kneissl
, N. Linder
, G. H. Döhler
, Ulrich Dieter Felix Keil

Friedrich-Alexander University Erlangen-Nürnberg

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

We have measured the electroabsorption in low-temperature grown GaAs by performing room-temperature transmission experiments in the spectral range from 1.3 to 1.9 eV for different electric fields induced by a voltage applied to a metal-semiconductor-metal structure. The devices were separated from the substrate by using an epitaxial liftoff technique. Therefore, we have been able to observe the electro-optic effect at the fundamental band gap as well as at the split-off band edge. The absorption is clearly polarization dependent at the fundamental bandgap but only weakly at the split-off band gap, in agreement with the theory of the Franz-Keldysh effect. (C) 1996 American Institute of Physics.

Original language	English
Journal	Applied Physics Letters
Volume	68
Issue number	21
Pages (from-to)	2968-2970
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.116371
Publication status	Published - 1996

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Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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title = "Polarization dependence of the electroabsorption in low-temperature grown GaAs for above band-gap energies",

abstract = "We have measured the electroabsorption in low-temperature grown GaAs by performing room-temperature transmission experiments in the spectral range from 1.3 to 1.9 eV for different electric fields induced by a voltage applied to a metal-semiconductor-metal structure. The devices were separated from the substrate by using an epitaxial liftoff technique. Therefore, we have been able to observe the electro-optic effect at the fundamental band gap as well as at the split-off band edge. The absorption is clearly polarization dependent at the fundamental bandgap but only weakly at the split-off band gap, in agreement with the theory of the Franz-Keldysh effect. (C) 1996 American Institute of Physics.",

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note = "Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.",

year = "1996",

doi = "10.1063/1.116371",

language = "English",

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pages = "2968--2970",

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TY - JOUR

T1 - Polarization dependence of the electroabsorption in low-temperature grown GaAs for above band-gap energies

AU - Ruff, M.

AU - Streb, D.

AU - Dankowski, S. U.

AU - Tautz, S.

AU - Kiesel, P.

AU - Knüpfer, B.

AU - Kneissl, M.

AU - Linder, N.

AU - Döhler, G. H.

AU - Keil, Ulrich Dieter Felix

N1 - Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

PY - 1996

Y1 - 1996

N2 - We have measured the electroabsorption in low-temperature grown GaAs by performing room-temperature transmission experiments in the spectral range from 1.3 to 1.9 eV for different electric fields induced by a voltage applied to a metal-semiconductor-metal structure. The devices were separated from the substrate by using an epitaxial liftoff technique. Therefore, we have been able to observe the electro-optic effect at the fundamental band gap as well as at the split-off band edge. The absorption is clearly polarization dependent at the fundamental bandgap but only weakly at the split-off band gap, in agreement with the theory of the Franz-Keldysh effect. (C) 1996 American Institute of Physics.

AB - We have measured the electroabsorption in low-temperature grown GaAs by performing room-temperature transmission experiments in the spectral range from 1.3 to 1.9 eV for different electric fields induced by a voltage applied to a metal-semiconductor-metal structure. The devices were separated from the substrate by using an epitaxial liftoff technique. Therefore, we have been able to observe the electro-optic effect at the fundamental band gap as well as at the split-off band edge. The absorption is clearly polarization dependent at the fundamental bandgap but only weakly at the split-off band gap, in agreement with the theory of the Franz-Keldysh effect. (C) 1996 American Institute of Physics.

U2 - 10.1063/1.116371

DO - 10.1063/1.116371

M3 - Journal article

SN - 0003-6951

VL - 68

SP - 2968

EP - 2970

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Polarization dependence of the electroabsorption in low-temperature grown GaAs for above band-gap energies

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