Polarization dependence of the electroabsorption in low-temperature grown GaAs for above band-gap energies

M. Ruff, D. Streb, S. U. Dankowski, S. Tautz, P. Kiesel, B. Knüpfer, M. Kneissl, N. Linder, G. H. Döhler, Ulrich Dieter Felix Keil

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    Abstract

    We have measured the electroabsorption in low-temperature grown GaAs by performing room-temperature transmission experiments in the spectral range from 1.3 to 1.9 eV for different electric fields induced by a voltage applied to a metal-semiconductor-metal structure. The devices were separated from the substrate by using an epitaxial liftoff technique. Therefore, we have been able to observe the electro-optic effect at the fundamental band gap as well as at the split-off band edge. The absorption is clearly polarization dependent at the fundamental bandgap but only weakly at the split-off band gap, in agreement with the theory of the Franz-Keldysh effect. (C) 1996 American Institute of Physics.
    Original languageEnglish
    JournalApplied Physics Letters
    Volume68
    Issue number21
    Pages (from-to)2968-2970
    ISSN0003-6951
    DOIs
    Publication statusPublished - 1996

    Bibliographical note

    Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

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