Plasmonic modulator based on thin metal-semiconductor-metal waveguide with gain core

Viktoriia Babicheva, Radu Malureanu, Andrei Lavrinenko

Research output: Contribution to journalConference articleResearchpeer-review

Abstract

We focus on plasmonic modulators with a gain core to be implemented as active nanodevices in photonic integrated circuits. In particular, we analyze metal–semiconductor–metal (MSM) waveguides with InGaAsP-based active material layers. A MSM waveguide enables high field localization and therefore high modulation speed. The modulation is achieved by changing the gain of the core that results in different transmittance through the waveguide. Dependences on the waveguide core size and gain values of various active materials are studied. The effective propagation constants in the MSM waveguides are calculated numerically. We optimize the structure by considering thin metal layers. A thin single metal layer supports an asymmetric mode with a high propagation constant. Implementing such layers as the waveguide claddings allows to achieve several times higher effective indices than in the case of a waveguide with thick (>50 nm) metal layers. In turn, the high effective index leads to enhanced modulation speed. We show that a MSM waveguide with the electrical current control of the gain incorporates compactness and deep modulation along with a reasonable level of transmittance.
Original languageEnglish
JournalProceedings of SPIE, the International Society for Optical Engineering
Volume8627
Pages (from-to)86270X
Number of pages7
ISSN0277-786X
DOIs
Publication statusPublished - 2013
EventSPIE Photonics West : Integrated Optics: Devices, Materials, and Technologies XVII - San Francisco, United States
Duration: 1 Feb 20136 Feb 2013

Conference

ConferenceSPIE Photonics West : Integrated Optics: Devices, Materials, and Technologies XVII
Country/TerritoryUnited States
CitySan Francisco
Period01/02/201306/02/2013

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