Plasma-enhanced chemical vapor deposited silicon oxynitride films for optical waveguide bridges for use in mechanical sensors

Torben Storgaard-Larsen, Otto Leistiko

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    In this paper the influence of RF power, ammonia flow, annealing temperature, and annealing time on the optical and mechanical properties of plasma-enhanced chemically vapor deposited silicon oxynitride films, is presented. A low refractive index (1.47 to 1.48) film having tensile stress has been developed as cladding material for optical waveguides. By combining this waveguide material with a special type of UV photosensitive glass, a low tensile stress strip-loaded waveguide structure, based on a three-layer sandwich structure, has been designed and the stress distribution through the structure investigated.
    Original languageEnglish
    JournalJournal of The Electrochemical Society
    Issue number4
    Pages (from-to)1505-1513
    Publication statusPublished - 1997

    Bibliographical note

    Copyright The Electrochemical Society, Inc. [1997]. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS).

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