Abstract
A technique, the so-called Drift Strip Method (DSM), for improving the CdZnTe detector energy response to hard X-rays and gamma-rays was applied as a pixel geometry. First tests have confirmed that this detector type provides excellent energy resolution and imaging performance. We specifically report on the performance of 3 mm thick prototype CZT drift pixel detectors fabricated using material from eV-products. We discuss issues associated with detector module performance. Characterization results obtained from several prototype drift pixel detectors are presented. Results of position and energy resolution measurements, charge sharing and IV-measurements are discussed.
| Original language | English |
|---|---|
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 52 |
| Issue number | 5 |
| Pages (from-to) | 1975-1981 |
| ISSN | 0018-9499 |
| Publication status | Published - 2005 |
Keywords
- CdZnTe drift strip detectors
- room temperature semiconductor detectors
- CdZnTe drift pixel detectors
- X- and gamma-ray detectors