Pinning Properties of PLD (NdxSmxGd1−2x)Ba2Cu3O7−δ Thin films

Xiaofen Li; Jean-Claude Grivel; Zhao Yue; Dong He

doi:10.1016/j.phpro.2012.06.134

Pinning Properties of PLD (Nd_xSm_xGd_1−2x)Ba₂Cu₃O_7−δ Thin films

Xiaofen Li, Jean-Claude Grivel, Zhao Yue, Dong He

Department of Energy Conversion and Storage

Research output: Contribution to journal › Conference article › Research › peer-review

Abstract

The self field critical current density, flux relaxation rate and accommodation field is studied in ternary rare earth (RE) barium cuprate thin films made by PLD on STO, with RE=Nd, Sm and Gd. By systematically changing the substitution level of Nd and Sm in GdBCO films, we found that the accommodation field at low temperature is increased due to the substitution. However, the decay of the self field critical current density and less effective pinning at higher temperature make the high level substituted films less attractive compared with the low level substituted film from the application point of view.

Original language	English
Journal	Physics Procedia
Volume	36
Pages (from-to)	463-467
ISSN	1875-3892
DOIs	https://doi.org/10.1016/j.phpro.2012.06.134
Publication status	Published - 2012
Event	Superconductivity Centennial Conference (SCC-2011) - The Hague, Netherlands Duration: 18 Sep 2011 → 23 Sep 2011

Conference

Conference	Superconductivity Centennial Conference (SCC-2011)
Country	Netherlands
City	The Hague
Period	18/09/2011 → 23/09/2011

Bibliographical note

Supercondictivity centennial conference

Keywords

RE substitution
NdSmGdBCO films
accommodation field
relaxation rate

Access to Document

10.1016/j.phpro.2012.06.134

Fingerprint Dive into the research topics of 'Pinning Properties of PLD (NdxSmxGd1−2x)Ba2Cu3O7−δ Thin films'. Together they form a unique fingerprint.

Cite this

@inproceedings{a69398f9f55e4aa18fa6eadbf25d42c0,

title = "Pinning Properties of PLD (NdxSmxGd1−2x)Ba2Cu3O7−δ Thin films",

abstract = "The self field critical current density, flux relaxation rate and accommodation field is studied in ternary rare earth (RE) barium cuprate thin films made by PLD on STO, with RE=Nd, Sm and Gd. By systematically changing the substitution level of Nd and Sm in GdBCO films, we found that the accommodation field at low temperature is increased due to the substitution. However, the decay of the self field critical current density and less effective pinning at higher temperature make the high level substituted films less attractive compared with the low level substituted film from the application point of view.",

keywords = "RE substitution, NdSmGdBCO films, accommodation field, relaxation rate",

author = "Xiaofen Li and Jean-Claude Grivel and Zhao Yue and Dong He",

note = "Supercondictivity centennial conference; Superconductivity Centennial Conference (SCC-2011) ; Conference date: 18-09-2011 Through 23-09-2011",

year = "2012",

doi = "10.1016/j.phpro.2012.06.134",

language = "English",

volume = "36",

pages = "463--467",

journal = "Physics Procedia",

issn = "1875-3892",

publisher = "Elsevier",

}

TY - GEN

T1 - Pinning Properties of PLD (NdxSmxGd1−2x)Ba2Cu3O7−δ Thin films

AU - Li, Xiaofen

AU - Grivel, Jean-Claude

AU - Yue, Zhao

AU - He, Dong

N1 - Supercondictivity centennial conference

PY - 2012

Y1 - 2012

N2 - The self field critical current density, flux relaxation rate and accommodation field is studied in ternary rare earth (RE) barium cuprate thin films made by PLD on STO, with RE=Nd, Sm and Gd. By systematically changing the substitution level of Nd and Sm in GdBCO films, we found that the accommodation field at low temperature is increased due to the substitution. However, the decay of the self field critical current density and less effective pinning at higher temperature make the high level substituted films less attractive compared with the low level substituted film from the application point of view.

AB - The self field critical current density, flux relaxation rate and accommodation field is studied in ternary rare earth (RE) barium cuprate thin films made by PLD on STO, with RE=Nd, Sm and Gd. By systematically changing the substitution level of Nd and Sm in GdBCO films, we found that the accommodation field at low temperature is increased due to the substitution. However, the decay of the self field critical current density and less effective pinning at higher temperature make the high level substituted films less attractive compared with the low level substituted film from the application point of view.

KW - RE substitution

KW - NdSmGdBCO films

KW - accommodation field

KW - relaxation rate

U2 - 10.1016/j.phpro.2012.06.134

DO - 10.1016/j.phpro.2012.06.134

M3 - Conference article

VL - 36

SP - 463

EP - 467

JO - Physics Procedia

JF - Physics Procedia

SN - 1875-3892

T2 - Superconductivity Centennial Conference (SCC-2011)

Y2 - 18 September 2011 through 23 September 2011

ER -