Piezoresistive effect in top-down fabricated silicon nanowires

Kasper Reck; Jacob Richter; Ole Hansen; Erik Vilain Thomsen

doi:10.1109/MEMSYS.2008.4443757

Piezoresistive effect in top-down fabricated silicon nanowires

Kasper Reck, Jacob Richter, Ole Hansen, Erik Vilain Thomsen

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

We have designed and fabricated silicon test chips to investigate the piezoresistive properties of both crystalline and polycrystalline nanowires using a top-down approach, in order to comply with conventional fabrication techniques. The test chip consists of 5 silicon nanowires and a reference resistor, each with integrated contacts for electrical 4-point measurements. We show an increase in the piezoresistive effect of 633% compared to bulk silicon. Preliminary temperature measurements indicate a larger temperature dependence of silicon nanowires, compared to bulk silicon. An increase of up to 34% compared to bulk polysilicon is observed in polysilicon nanowires with decreasing dimensions.

Original language	English
Title of host publication	IEEE 21st International Conference on Micro Electro Mechanical Systems, 2008. MEMS 2008.
Publisher	IEEE
Publication date	2008
ISBN (Print)	978-1-4244-1792-6
DOIs	https://doi.org/10.1109/MEMSYS.2008.4443757
Publication status	Published - 2008
Event	IEEE 21st International Conference on Micro Electro Mechanical Systems, 2008. - Tucson, AZ Duration: 1 Jan 2008 → …

Conference

Conference	IEEE 21st International Conference on Micro Electro Mechanical Systems, 2008.
City	Tucson, AZ
Period	01/01/2008 → …

Bibliographical note

Copyright: 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

Cite this

Reck, K., Richter, J., Hansen, O., & Thomsen, E. V. (2008). Piezoresistive effect in top-down fabricated silicon nanowires. In IEEE 21st International Conference on Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE. https://doi.org/10.1109/MEMSYS.2008.4443757

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author = "Kasper Reck and Jacob Richter and Ole Hansen and Thomsen, {Erik Vilain}",

note = "Copyright: 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE",

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AU - Thomsen, Erik Vilain

N1 - Copyright: 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE

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N2 - We have designed and fabricated silicon test chips to investigate the piezoresistive properties of both crystalline and polycrystalline nanowires using a top-down approach, in order to comply with conventional fabrication techniques. The test chip consists of 5 silicon nanowires and a reference resistor, each with integrated contacts for electrical 4-point measurements. We show an increase in the piezoresistive effect of 633% compared to bulk silicon. Preliminary temperature measurements indicate a larger temperature dependence of silicon nanowires, compared to bulk silicon. An increase of up to 34% compared to bulk polysilicon is observed in polysilicon nanowires with decreasing dimensions.

AB - We have designed and fabricated silicon test chips to investigate the piezoresistive properties of both crystalline and polycrystalline nanowires using a top-down approach, in order to comply with conventional fabrication techniques. The test chip consists of 5 silicon nanowires and a reference resistor, each with integrated contacts for electrical 4-point measurements. We show an increase in the piezoresistive effect of 633% compared to bulk silicon. Preliminary temperature measurements indicate a larger temperature dependence of silicon nanowires, compared to bulk silicon. An increase of up to 34% compared to bulk polysilicon is observed in polysilicon nanowires with decreasing dimensions.

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DO - 10.1109/MEMSYS.2008.4443757

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BT - IEEE 21st International Conference on Micro Electro Mechanical Systems, 2008. MEMS 2008.

PB - IEEE

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Access to Document

10.1109/MEMSYS.2008.4443757

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