Abstract
We have designed and fabricated silicon test chips to investigate the piezoresistive properties of both crystalline and polycrystalline nanowires using a top-down approach, in order to comply with conventional fabrication techniques. The test chip consists of 5 silicon nanowires and a reference resistor, each with integrated contacts for electrical 4-point measurements. We show an increase in the piezoresistive effect of 633% compared to bulk silicon. Preliminary temperature measurements indicate a larger temperature dependence of silicon nanowires, compared to bulk silicon. An increase of up to 34% compared to bulk polysilicon is observed in polysilicon nanowires with decreasing dimensions.
Original language | English |
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Title of host publication | IEEE 21st International Conference on Micro Electro Mechanical Systems, 2008. MEMS 2008. |
Publisher | IEEE |
Publication date | 2008 |
ISBN (Print) | 978-1-4244-1792-6 |
DOIs | |
Publication status | Published - 2008 |
Event | IEEE 21st International Conference on Micro Electro Mechanical Systems, 2008. - Tucson, AZ Duration: 1 Jan 2008 → … |
Conference
Conference | IEEE 21st International Conference on Micro Electro Mechanical Systems, 2008. |
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City | Tucson, AZ |
Period | 01/01/2008 → … |