Piezoresistive effect in top-down fabricated silicon nanowires

Kasper Reck, Jacob Richter, Ole Hansen, Erik Vilain Thomsen

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    Abstract

    We have designed and fabricated silicon test chips to investigate the piezoresistive properties of both crystalline and polycrystalline nanowires using a top-down approach, in order to comply with conventional fabrication techniques. The test chip consists of 5 silicon nanowires and a reference resistor, each with integrated contacts for electrical 4-point measurements. We show an increase in the piezoresistive effect of 633% compared to bulk silicon. Preliminary temperature measurements indicate a larger temperature dependence of silicon nanowires, compared to bulk silicon. An increase of up to 34% compared to bulk polysilicon is observed in polysilicon nanowires with decreasing dimensions.
    Original languageEnglish
    Title of host publicationIEEE 21st International Conference on Micro Electro Mechanical Systems, 2008. MEMS 2008.
    PublisherIEEE
    Publication date2008
    ISBN (Print)978-1-4244-1792-6
    DOIs
    Publication statusPublished - 2008
    Event2008 IEEE 21st International Conference on Micro Electro Mechanical Systems - Tucson, United States
    Duration: 13 Jan 200817 Jan 2008
    Conference number: 21
    https://ieeexplore.ieee.org/xpl/conhome/4443569/proceeding

    Conference

    Conference2008 IEEE 21st International Conference on Micro Electro Mechanical Systems
    Number21
    Country/TerritoryUnited States
    CityTucson
    Period13/01/200817/01/2008
    Internet address

    Bibliographical note

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