Piezoelectric models for semiconductor quantum dots

B. Lassen; D. Barettin; Morten Willatzen; L.C. Lew Yan Voon

doi:10.1016/j.mejo.2008.01.059

Piezoelectric models for semiconductor quantum dots

B. Lassen, D. Barettin, Morten Willatzen, L.C. Lew Yan Voon

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

The importance of fully coupled and semi-coupled piezoelectric models for quantum dots are compared. Differences in the strain of around 30% and in the electron energies of up to 30meV were found possible for GaN/AlN dots.

Original language	English
Journal	Microelectronics Journal
Volume	39
Issue number	11
Pages (from-to)	1226-1228
ISSN	0959-8324
DOIs	https://doi.org/10.1016/j.mejo.2008.01.059
Publication status	Published - 2008
Externally published	Yes

Keywords

Piezoelectric effect
Quantum dot
Schrödinger–Poisson–Navier

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10.1016/j.mejo.2008.01.059

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title = "Piezoelectric models for semiconductor quantum dots",

abstract = "The importance of fully coupled and semi-coupled piezoelectric models for quantum dots are compared. Differences in the strain of around 30\% and in the electron energies of up to 30meV were found possible for GaN/AlN dots.",

keywords = "Piezoelectric effect, Quantum dot, Schr{\"o}dinger–Poisson–Navier",

author = "B. Lassen and D. Barettin and Morten Willatzen and \{Lew Yan Voon\}, L.C.",

year = "2008",

doi = "10.1016/j.mejo.2008.01.059",

language = "English",

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journal = "Microelectronics Journal",

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T1 - Piezoelectric models for semiconductor quantum dots

AU - Lassen, B.

AU - Barettin, D.

AU - Willatzen, Morten

AU - Lew Yan Voon, L.C.

PY - 2008

Y1 - 2008

N2 - The importance of fully coupled and semi-coupled piezoelectric models for quantum dots are compared. Differences in the strain of around 30% and in the electron energies of up to 30meV were found possible for GaN/AlN dots.

AB - The importance of fully coupled and semi-coupled piezoelectric models for quantum dots are compared. Differences in the strain of around 30% and in the electron energies of up to 30meV were found possible for GaN/AlN dots.

KW - Piezoelectric effect

KW - Quantum dot

KW - Schrödinger–Poisson–Navier

U2 - 10.1016/j.mejo.2008.01.059

DO - 10.1016/j.mejo.2008.01.059

M3 - Journal article

SN - 0959-8324

VL - 39

SP - 1226

EP - 1228

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 11

ER -

Piezoelectric models for semiconductor quantum dots

Abstract

Keywords

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