Piezoelectric models for semiconductor quantum dots

B. Lassen, D. Barettin, Morten Willatzen, L.C. Lew Yan Voon

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

The importance of fully coupled and semi-coupled piezoelectric models for quantum dots are compared. Differences in the strain of around 30% and in the electron energies of up to 30meV were found possible for GaN/AlN dots.
Original languageEnglish
JournalMicroelectronics Journal
Volume39
Issue number11
Pages (from-to)1226-1228
ISSN0959-8324
DOIs
Publication statusPublished - 2008
Externally publishedYes

Keywords

  • Piezoelectric effect
  • Quantum dot
  • Schrödinger–Poisson–Navier

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