Physical based Schottky barrier diode modeling for THz applications

Lei Yan; Viktor Krozer; Rasmus Schandorph Michaelsen; Torsten Djurhuus; Tom Keinicke Johansen

doi:10.1109/IEEE-IWS.2013.6616741

Physical based Schottky barrier diode modeling for THz applications

Lei Yan, Viktor Krozer, Rasmus Schandorph Michaelsen, Torsten Djurhuus, Tom Keinicke Johansen

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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Abstract

In this work, a physical Schottky barrier diode model is presented. The model is based on physical parameters such as anode area, Ohmic contact area, doping profile from epitaxial (EPI) and substrate (SUB) layers, layer thicknesses, barrier height, specific contact resistance, and device temperature. The effects of barrier height lowering, nonlinear resistance from the EPI layer, and hot electron noise are all included for accurate characterization of the Schottky diode. To verify the diode model, measured I-V and C-V characteristics are compared with the simulation results. Due to the lack of measurement data for noise behaviors, simulated noise temperature is compared with the experimental data found from the open literature.

Original language	English
Title of host publication	Proceedings of the 2013 IEEE International Wireless Symposium
Number of pages	4
Publisher	IEEE
Publication date	2013
ISBN (Print)	9781467321419
DOIs	https://doi.org/10.1109/IEEE-IWS.2013.6616741
Publication status	Published - 2013
Event	2013 IEEE International Wireless Symposium - Beijing, China Duration: 14 Apr 2013 → 18 Apr 2013 https://ieeexplore.ieee.org/xpl/conhome/6598370/proceeding

Conference

Conference	2013 IEEE International Wireless Symposium
Country/Territory	China
City	Beijing
Period	14/04/2013 → 18/04/2013
Internet address	https://ieeexplore.ieee.org/xpl/conhome/6598370/proceeding

Keywords

Computing and Processing
Schottky barrier diode
Physical based model
Barrier height lowering
Hot-electron noise

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10.1109/IEEE-IWS.2013.6616741

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title = "Physical based Schottky barrier diode modeling for THz applications",

abstract = "In this work, a physical Schottky barrier diode model is presented. The model is based on physical parameters such as anode area, Ohmic contact area, doping profile from epitaxial (EPI) and substrate (SUB) layers, layer thicknesses, barrier height, specific contact resistance, and device temperature. The effects of barrier height lowering, nonlinear resistance from the EPI layer, and hot electron noise are all included for accurate characterization of the Schottky diode. To verify the diode model, measured I-V and C-V characteristics are compared with the simulation results. Due to the lack of measurement data for noise behaviors, simulated noise temperature is compared with the experimental data found from the open literature.",

keywords = "Computing and Processing, Schottky barrier diode, Physical based model, Barrier height lowering, Hot-electron noise",

author = "Lei Yan and Viktor Krozer and Michaelsen, {Rasmus Schandorph} and Torsten Djurhuus and Johansen, {Tom Keinicke}",

year = "2013",

doi = "10.1109/IEEE-IWS.2013.6616741",

language = "English",

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booktitle = "Proceedings of the 2013 IEEE International Wireless Symposium",

publisher = "IEEE",

address = "United States",

note = "2013 IEEE International Wireless Symposium, IWS 2013 ; Conference date: 14-04-2013 Through 18-04-2013",

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T1 - Physical based Schottky barrier diode modeling for THz applications

AU - Yan, Lei

AU - Krozer, Viktor

AU - Michaelsen, Rasmus Schandorph

AU - Djurhuus, Torsten

AU - Johansen, Tom Keinicke

PY - 2013

Y1 - 2013

N2 - In this work, a physical Schottky barrier diode model is presented. The model is based on physical parameters such as anode area, Ohmic contact area, doping profile from epitaxial (EPI) and substrate (SUB) layers, layer thicknesses, barrier height, specific contact resistance, and device temperature. The effects of barrier height lowering, nonlinear resistance from the EPI layer, and hot electron noise are all included for accurate characterization of the Schottky diode. To verify the diode model, measured I-V and C-V characteristics are compared with the simulation results. Due to the lack of measurement data for noise behaviors, simulated noise temperature is compared with the experimental data found from the open literature.

AB - In this work, a physical Schottky barrier diode model is presented. The model is based on physical parameters such as anode area, Ohmic contact area, doping profile from epitaxial (EPI) and substrate (SUB) layers, layer thicknesses, barrier height, specific contact resistance, and device temperature. The effects of barrier height lowering, nonlinear resistance from the EPI layer, and hot electron noise are all included for accurate characterization of the Schottky diode. To verify the diode model, measured I-V and C-V characteristics are compared with the simulation results. Due to the lack of measurement data for noise behaviors, simulated noise temperature is compared with the experimental data found from the open literature.

KW - Computing and Processing

KW - Schottky barrier diode

KW - Physical based model

KW - Barrier height lowering

KW - Hot-electron noise

U2 - 10.1109/IEEE-IWS.2013.6616741

DO - 10.1109/IEEE-IWS.2013.6616741

M3 - Article in proceedings

SN - 9781467321419

BT - Proceedings of the 2013 IEEE International Wireless Symposium

PB - IEEE

T2 - 2013 IEEE International Wireless Symposium

Y2 - 14 April 2013 through 18 April 2013

ER -

Physical based Schottky barrier diode modeling for THz applications

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