Physical based Schottky barrier diode modeling for THz applications

Lei Yan, Viktor Krozer, Rasmus Schandorph Michaelsen, Torsten Djurhuus, Tom Keinicke Johansen

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Abstract

In this work, a physical Schottky barrier diode model is presented. The model is based on physical parameters such as anode area, Ohmic contact area, doping profile from epitaxial (EPI) and substrate (SUB) layers, layer thicknesses, barrier height, specific contact resistance, and device temperature. The effects of barrier height lowering, nonlinear resistance from the EPI layer, and hot electron noise are all included for accurate characterization of the Schottky diode. To verify the diode model, measured I-V and C-V characteristics are compared with the simulation results. Due to the lack of measurement data for noise behaviors, simulated noise temperature is compared with the experimental data found from the open literature.
Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE International Wireless Symposium
Number of pages4
PublisherIEEE
Publication date2013
ISBN (Print)9781467321419
DOIs
Publication statusPublished - 2013
Event2013 IEEE International Wireless Symposium - Beijing, China
Duration: 14 Apr 201318 Apr 2013

Conference

Conference2013 IEEE International Wireless Symposium
CountryChina
CityBeijing
Period14/04/201318/04/2013

Keywords

  • Computing and Processing
  • Schottky barrier diode
  • Physical based model
  • Barrier height lowering
  • Hot-electron noise

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