Photothermal modification of high index dielectric structures

Xiaolong Zhu (Inventor), Anders Kristensen (Inventor), Niels Asger Mortensen (Inventor)

    Research output: Patent

    110 Downloads (Pure)

    Abstract

    There is presented a method for geometrically modifying high-index dielectric structures on a support structure, said method comprising providing a support structure, a first plurality of high-index dielectric structures being supported by the support structure, said method further comprising changing a geometry specifically of high-index dielectric structures within a second plurality of high- index dielectric structures, wherein the second plurality of high-index dielectric structures is a sub-set of the first plurality of high-index dielectric structures, wherein said changing the geometry is carried out by photothermally melting at least a portion of each of the high-index dielectric structures within the second plurality of high-index dielectric structures by irradiating the second plurality of high-index dielectric structures with incident electromagnetic radiation having an incident intensity in a plane of the second plurality of high-index dielectric structures, and thereby exciting resonances associated with each of the high- index dielectric structures within the second plurality of high-index dielectric structures, wherein said support structure comprises a first plurality of topographical features, and wherein the first plurality of high-index dielectric structures are given by high-index dielectric structures on or in said topographical features, and/or holes in a high-index dielectric film, wherein said holes correspond to said topographical features.
    Original languageEnglish
    IPCG02B5/18; G02B5/20; G02B5/28
    Patent numberWO2018122208
    Filing date05/07/2018
    CountryInternational Bureau of the World Intellectual Property Organization (WIPO)
    Priority date30/12/2016
    Priority numberEP20160207500
    Publication statusPublished - 2018

    Cite this

    Zhu, X., Kristensen, A., & Mortensen, N. A. (2018). IPC No. G02B5/18; G02B5/20; G02B5/28. Photothermal modification of high index dielectric structures. (Patent No. WO2018122208 ).