Photothermal modification of high index dielectric structures

Xiaolong Zhu (Inventor), Anders Kristensen (Inventor), Niels Asger Mortensen (Inventor)

    Research output: Patent

    82 Downloads (Pure)

    Abstract

    There is presented a method for geometrically modifying high-index dielectric structures on a support structure, said method comprising providing a support structure, a first plurality of high-index dielectric structures being supported by the support structure, said method further comprising changing a geometry specifically of high-index dielectric structures within a second plurality of high- index dielectric structures, wherein the second plurality of high-index dielectric structures is a sub-set of the first plurality of high-index dielectric structures, wherein said changing the geometry is carried out by photothermally melting at least a portion of each of the high-index dielectric structures within the second plurality of high-index dielectric structures by irradiating the second plurality of high-index dielectric structures with incident electromagnetic radiation having an incident intensity in a plane of the second plurality of high-index dielectric structures, and thereby exciting resonances associated with each of the high- index dielectric structures within the second plurality of high-index dielectric structures, wherein said support structure comprises a first plurality of topographical features, and wherein the first plurality of high-index dielectric structures are given by high-index dielectric structures on or in said topographical features, and/or holes in a high-index dielectric film, wherein said holes correspond to said topographical features.
    Original languageEnglish
    IPCG02B5/18; G02B5/20; G02B5/28
    Patent numberWO2018122208
    Filing date05/07/2018
    CountryInternational Bureau of the World Intellectual Property Organization (WIPO)
    Priority date30/12/2016
    Priority numberEP20160207500
    Publication statusPublished - 2018

    Cite this

    Zhu, X., Kristensen, A., & Mortensen, N. A. (2018). IPC No. G02B5/18; G02B5/20; G02B5/28. Photothermal modification of high index dielectric structures. (Patent No. WO2018122208 ).
    Zhu, Xiaolong (Inventor) ; Kristensen, Anders (Inventor) ; Mortensen, Niels Asger (Inventor). / Photothermal modification of high index dielectric structures. IPC No.: G02B5/18; G02B5/20; G02B5/28. Patent No.: WO2018122208 . Jul 05, 2018.
    @misc{7455917ea7b34a9e9a571480e4ae0697,
    title = "Photothermal modification of high index dielectric structures",
    abstract = "There is presented a method for geometrically modifying high-index dielectric structures on a support structure, said method comprising providing a support structure, a first plurality of high-index dielectric structures being supported by the support structure, said method further comprising changing a geometry specifically of high-index dielectric structures within a second plurality of high- index dielectric structures, wherein the second plurality of high-index dielectric structures is a sub-set of the first plurality of high-index dielectric structures, wherein said changing the geometry is carried out by photothermally melting at least a portion of each of the high-index dielectric structures within the second plurality of high-index dielectric structures by irradiating the second plurality of high-index dielectric structures with incident electromagnetic radiation having an incident intensity in a plane of the second plurality of high-index dielectric structures, and thereby exciting resonances associated with each of the high- index dielectric structures within the second plurality of high-index dielectric structures, wherein said support structure comprises a first plurality of topographical features, and wherein the first plurality of high-index dielectric structures are given by high-index dielectric structures on or in said topographical features, and/or holes in a high-index dielectric film, wherein said holes correspond to said topographical features.",
    author = "Xiaolong Zhu and Anders Kristensen and Mortensen, {Niels Asger}",
    year = "2018",
    language = "English",
    type = "Patent",
    note = "WO2018122208 ; G02B5/18; G02B5/20; G02B5/28",

    }

    Zhu, X, Kristensen, A & Mortensen, NA Jul. 05 2018, Photothermal modification of high index dielectric structures, Patent No. WO2018122208 , IPC No. G02B5/18; G02B5/20; G02B5/28.

    Photothermal modification of high index dielectric structures. / Zhu, Xiaolong (Inventor); Kristensen, Anders (Inventor); Mortensen, Niels Asger (Inventor).

    IPC No.: G02B5/18; G02B5/20; G02B5/28. Patent No.: WO2018122208 . Jul 05, 2018.

    Research output: Patent

    TY - PAT

    T1 - Photothermal modification of high index dielectric structures

    AU - Zhu, Xiaolong

    AU - Kristensen, Anders

    AU - Mortensen, Niels Asger

    PY - 2018

    Y1 - 2018

    N2 - There is presented a method for geometrically modifying high-index dielectric structures on a support structure, said method comprising providing a support structure, a first plurality of high-index dielectric structures being supported by the support structure, said method further comprising changing a geometry specifically of high-index dielectric structures within a second plurality of high- index dielectric structures, wherein the second plurality of high-index dielectric structures is a sub-set of the first plurality of high-index dielectric structures, wherein said changing the geometry is carried out by photothermally melting at least a portion of each of the high-index dielectric structures within the second plurality of high-index dielectric structures by irradiating the second plurality of high-index dielectric structures with incident electromagnetic radiation having an incident intensity in a plane of the second plurality of high-index dielectric structures, and thereby exciting resonances associated with each of the high- index dielectric structures within the second plurality of high-index dielectric structures, wherein said support structure comprises a first plurality of topographical features, and wherein the first plurality of high-index dielectric structures are given by high-index dielectric structures on or in said topographical features, and/or holes in a high-index dielectric film, wherein said holes correspond to said topographical features.

    AB - There is presented a method for geometrically modifying high-index dielectric structures on a support structure, said method comprising providing a support structure, a first plurality of high-index dielectric structures being supported by the support structure, said method further comprising changing a geometry specifically of high-index dielectric structures within a second plurality of high- index dielectric structures, wherein the second plurality of high-index dielectric structures is a sub-set of the first plurality of high-index dielectric structures, wherein said changing the geometry is carried out by photothermally melting at least a portion of each of the high-index dielectric structures within the second plurality of high-index dielectric structures by irradiating the second plurality of high-index dielectric structures with incident electromagnetic radiation having an incident intensity in a plane of the second plurality of high-index dielectric structures, and thereby exciting resonances associated with each of the high- index dielectric structures within the second plurality of high-index dielectric structures, wherein said support structure comprises a first plurality of topographical features, and wherein the first plurality of high-index dielectric structures are given by high-index dielectric structures on or in said topographical features, and/or holes in a high-index dielectric film, wherein said holes correspond to said topographical features.

    M3 - Patent

    M1 - WO2018122208

    Y2 - 2018/07/05

    ER -

    Zhu X, Kristensen A, Mortensen NA, inventors. Photothermal modification of high index dielectric structures. G02B5/18; G02B5/20; G02B5/28. 2018.