The preparation and application of co-doped polycrystalline SiC as source in sublimation growth of fluorescent layers is a complex topic. Photoluminescence topographies of luminescent 6H-SiC layers and their corresponding source crystals have been studied in order to investigate the dependence of the epitaxial growth on the source material. It is shown that the homogeneity concerning the dopant incorporation and the layer luminescence intensity does not depend on the characteristics of the PVT grown source material. Therefore co-doped polycrystalline SiC is a promising source material in fast sublimation growth of luminescent 6H-SiC.
|Title of host publication||Silicon Carbide and Related Materials 2012|
|Publication status||Published - 2013|
|Event||European Conference on Silicon Carbide and Related Materials (ECSCRM 2012) - Saint-Petersburg, Russian Federation|
Duration: 2 Sep 2012 → 6 Sep 2012
|Conference||European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)|
|Period||02/09/2012 → 06/09/2012|
|Series||Materials Science Forum|