Photoluminescence topography of fluorescent SiC and its corresponding source crystals

M. Wilhelm; M. Kaiser; V. Jokubavicus; M. Syväjärvi; Yiyu Ou; Haiyan Ou; P. Wellmann

doi:10.4028/www.scientific.net/MSF.740-742.421

Photoluminescence topography of fluorescent SiC and its corresponding source crystals

M. Wilhelm, M. Kaiser, V. Jokubavicus, M. Syväjärvi, Yiyu Ou, Haiyan Ou, P. Wellmann

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

The preparation and application of co-doped polycrystalline SiC as source in sublimation growth of fluorescent layers is a complex topic. Photoluminescence topographies of luminescent 6H-SiC layers and their corresponding source crystals have been studied in order to investigate the dependence of the epitaxial growth on the source material. It is shown that the homogeneity concerning the dopant incorporation and the layer luminescence intensity does not depend on the characteristics of the PVT grown source material. Therefore co-doped polycrystalline SiC is a promising source material in fast sublimation growth of luminescent 6H-SiC.

Original language	English
Title of host publication	Silicon Carbide and Related Materials 2012
Publication date	2013
Pages	421-424
ISBN (Print)	9783037856246
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.740-742.421
Publication status	Published - 2013
Event	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012) - Saint-Petersburg, Russian Federation Duration: 2 Sept 2012 → 6 Sept 2012 https://www.ecscrm-2012.org/

Conference

Conference	European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Country/Territory	Russian Federation
City	Saint-Petersburg
Period	02/09/2012 → 06/09/2012
Internet address	https://www.ecscrm-2012.org/

Series	Materials Science Forum
Volume	740-742
ISSN	0255-5476

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@inproceedings{68541f125d844fa9b91712bb283ab5b1,

title = "Photoluminescence topography of fluorescent SiC and its corresponding source crystals",

abstract = "The preparation and application of co-doped polycrystalline SiC as source in sublimation growth of fluorescent layers is a complex topic. Photoluminescence topographies of luminescent 6H-SiC layers and their corresponding source crystals have been studied in order to investigate the dependence of the epitaxial growth on the source material. It is shown that the homogeneity concerning the dopant incorporation and the layer luminescence intensity does not depend on the characteristics of the PVT grown source material. Therefore co-doped polycrystalline SiC is a promising source material in fast sublimation growth of luminescent 6H-SiC.",

author = "M. Wilhelm and M. Kaiser and V. Jokubavicus and M. Syv{\"a}j{\"a}rvi and Yiyu Ou and Haiyan Ou and P. Wellmann",

year = "2013",

doi = "10.4028/www.scientific.net/MSF.740-742.421",

language = "English",

isbn = "9783037856246",

series = "Materials Science Forum",

publisher = "Scientific.Net",

pages = "421--424",

booktitle = "Silicon Carbide and Related Materials 2012",

note = "European Conference on Silicon Carbide and Related Materials (ECSCRM 2012) ; Conference date: 02-09-2012 Through 06-09-2012",

url = "https://www.ecscrm-2012.org/",

}

Wilhelm, M, Kaiser, M, Jokubavicus, V, Syväjärvi, M, Ou, Y , Ou, H & Wellmann, P 2013, Photoluminescence topography of fluorescent SiC and its corresponding source crystals. in Silicon Carbide and Related Materials 2012. Materials Science Forum, vol. 740-742, pp. 421-424, European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Saint-Petersburg, Russian Federation, 02/09/2012. https://doi.org/10.4028/www.scientific.net/MSF.740-742.421

TY - GEN

T1 - Photoluminescence topography of fluorescent SiC and its corresponding source crystals

AU - Wilhelm, M.

AU - Kaiser, M.

AU - Jokubavicus, V.

AU - Syväjärvi, M.

AU - Ou, Yiyu

AU - Ou, Haiyan

AU - Wellmann, P.

PY - 2013

Y1 - 2013

N2 - The preparation and application of co-doped polycrystalline SiC as source in sublimation growth of fluorescent layers is a complex topic. Photoluminescence topographies of luminescent 6H-SiC layers and their corresponding source crystals have been studied in order to investigate the dependence of the epitaxial growth on the source material. It is shown that the homogeneity concerning the dopant incorporation and the layer luminescence intensity does not depend on the characteristics of the PVT grown source material. Therefore co-doped polycrystalline SiC is a promising source material in fast sublimation growth of luminescent 6H-SiC.

AB - The preparation and application of co-doped polycrystalline SiC as source in sublimation growth of fluorescent layers is a complex topic. Photoluminescence topographies of luminescent 6H-SiC layers and their corresponding source crystals have been studied in order to investigate the dependence of the epitaxial growth on the source material. It is shown that the homogeneity concerning the dopant incorporation and the layer luminescence intensity does not depend on the characteristics of the PVT grown source material. Therefore co-doped polycrystalline SiC is a promising source material in fast sublimation growth of luminescent 6H-SiC.

U2 - 10.4028/www.scientific.net/MSF.740-742.421

DO - 10.4028/www.scientific.net/MSF.740-742.421

M3 - Article in proceedings

SN - 9783037856246

T3 - Materials Science Forum

SP - 421

EP - 424

BT - Silicon Carbide and Related Materials 2012

T2 - European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)

Y2 - 2 September 2012 through 6 September 2012

ER -

Photoluminescence topography of fluorescent SiC and its corresponding source crystals

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