Photoluminescence topography of fluorescent SiC and its corresponding source crystals

M. Wilhelm, M. Kaiser, V. Jokubavicus, M. Syväjärvi, Yiyu Ou, Haiyan Ou, P. Wellmann

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

The preparation and application of co-doped polycrystalline SiC as source in sublimation growth of fluorescent layers is a complex topic. Photoluminescence topographies of luminescent 6H-SiC layers and their corresponding source crystals have been studied in order to investigate the dependence of the epitaxial growth on the source material. It is shown that the homogeneity concerning the dopant incorporation and the layer luminescence intensity does not depend on the characteristics of the PVT grown source material. Therefore co-doped polycrystalline SiC is a promising source material in fast sublimation growth of luminescent 6H-SiC.
Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2012
Publication date2013
Pages421-424
ISBN (Print)9783037856246
DOIs
Publication statusPublished - 2013
EventEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2012) - Saint-Petersburg, Russian Federation
Duration: 2 Sep 20126 Sep 2012
https://www.ecscrm-2012.org/

Conference

ConferenceEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Country/TerritoryRussian Federation
CitySaint-Petersburg
Period02/09/201206/09/2012
Internet address
SeriesMaterials Science Forum
Volume740-742
ISSN0255-5476

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