Photoluminescence study of InP and In(As, P) inclusions into Si (100) substrate

I. A. Melnichenko; A. Dragunova; N. V. Kryzhanovskaya; D. V. Viazmitinov; E. Semenova; Y. Berdnikov

doi:10.1088/1742-6596/2227/1/012017

Photoluminescence study of InP and In(As, P) inclusions into Si (100) substrate

I. A. Melnichenko^*
, A. Dragunova
, N. V. Kryzhanovskaya
, D. V. Viazmitinov
, E. Semenova
, Y. Berdnikov

^*Corresponding author for this work

Higher School of Economics

Research output: Contribution to journal › Conference article › Research › peer-review

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Abstract

We present a photoluminescence study of In(As,P) monolithic nanoinclusions into Si (100) substrates. The structures were grown in openings of the silicon substrates using an original approach based on the metal-organic vapor epitaxy method. The obtained arrays of In(As,P) nanoinclusions into the Si (100) surface were investigated by scanning microphotoluminescence spectroscopy. The obtained results show high crystalline quality of In(As,P) inclusions with broad emission peak in the near-infrared range of wavelengths.

Original language	English
Article number	012017
Book series	Journal of Physics: Conference Series
Volume	2227
Issue number	1
Number of pages	5
ISSN	1742-6588
DOIs	https://doi.org/10.1088/1742-6596/2227/1/012017
Publication status	Published - 2022
Event	23^rd Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics - Virtual event, Saint Petersburg, Russian Federation Duration: 22 Nov 2021 → 26 Nov 2021

Conference

Conference	23^rd Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics
Location	Virtual event
Country/Territory	Russian Federation
City	Saint Petersburg
Period	22/11/2021 → 26/11/2021

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@inproceedings{9c50c10e1bf64a2ca1c2e0a938a17fe7,

title = "Photoluminescence study of InP and In(As, P) inclusions into Si (100) substrate",

abstract = "We present a photoluminescence study of In(As,P) monolithic nanoinclusions into Si (100) substrates. The structures were grown in openings of the silicon substrates using an original approach based on the metal-organic vapor epitaxy method. The obtained arrays of In(As,P) nanoinclusions into the Si (100) surface were investigated by scanning microphotoluminescence spectroscopy. The obtained results show high crystalline quality of In(As,P) inclusions with broad emission peak in the near-infrared range of wavelengths. ",

author = "Melnichenko, \{I. A.\} and A. Dragunova and Kryzhanovskaya, \{N. V.\} and Viazmitinov, \{D. V.\} and E. Semenova and Y. Berdnikov",

note = "Publisher Copyright: {\textcopyright} Published under licence by IOP Publishing Ltd.; 23<sup>rd</sup> Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2021 ; Conference date: 22-11-2021 Through 26-11-2021",

year = "2022",

doi = "10.1088/1742-6596/2227/1/012017",

language = "English",

volume = "2227",

journal = "Journal of Physics: Conference Series",

issn = "1742-6588",

publisher = "IOP Publishing",

number = "1",

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TY - GEN

T1 - Photoluminescence study of InP and In(As, P) inclusions into Si (100) substrate

AU - Melnichenko, I. A.

AU - Dragunova, A.

AU - Kryzhanovskaya, N. V.

AU - Viazmitinov, D. V.

AU - Semenova, E.

AU - Berdnikov, Y.

PY - 2022

Y1 - 2022

N2 - We present a photoluminescence study of In(As,P) monolithic nanoinclusions into Si (100) substrates. The structures were grown in openings of the silicon substrates using an original approach based on the metal-organic vapor epitaxy method. The obtained arrays of In(As,P) nanoinclusions into the Si (100) surface were investigated by scanning microphotoluminescence spectroscopy. The obtained results show high crystalline quality of In(As,P) inclusions with broad emission peak in the near-infrared range of wavelengths.

AB - We present a photoluminescence study of In(As,P) monolithic nanoinclusions into Si (100) substrates. The structures were grown in openings of the silicon substrates using an original approach based on the metal-organic vapor epitaxy method. The obtained arrays of In(As,P) nanoinclusions into the Si (100) surface were investigated by scanning microphotoluminescence spectroscopy. The obtained results show high crystalline quality of In(As,P) inclusions with broad emission peak in the near-infrared range of wavelengths.

U2 - 10.1088/1742-6596/2227/1/012017

DO - 10.1088/1742-6596/2227/1/012017

M3 - Conference article

AN - SCOPUS:85127943668

SN - 1742-6588

VL - 2227

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012017

T2 - 23<sup>rd</sup> Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Y2 - 22 November 2021 through 26 November 2021

ER -

Photoluminescence study of InP and In(As, P) inclusions into Si (100) substrate

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Conference

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