Photoluminescence study of InP and In(As, P) inclusions into Si (100) substrate

I. A. Melnichenko*, A. Dragunova, N. V. Kryzhanovskaya, D. V. Viazmitinov, E. Semenova, Y. Berdnikov

*Corresponding author for this work

Research output: Contribution to journalConference articleResearchpeer-review

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Abstract

We present a photoluminescence study of In(As,P) monolithic nanoinclusions into Si (100) substrates. The structures were grown in openings of the silicon substrates using an original approach based on the metal-organic vapor epitaxy method. The obtained arrays of In(As,P) nanoinclusions into the Si (100) surface were investigated by scanning microphotoluminescence spectroscopy. The obtained results show high crystalline quality of In(As,P) inclusions with broad emission peak in the near-infrared range of wavelengths.

Original languageEnglish
Article number012017
Book seriesJournal of Physics: Conference Series
Volume2227
Issue number1
Number of pages5
ISSN1742-6588
DOIs
Publication statusPublished - 28 Mar 2022
Event23rd Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics - Virtual event, Saint Petersburg, Russian Federation
Duration: 22 Nov 202126 Nov 2021

Conference

Conference23rd Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics
LocationVirtual event
Country/TerritoryRussian Federation
CitySaint Petersburg
Period22/11/202126/11/2021

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