Photoluminescence studies of single InGaAs quantum dots

Kristjan Leosson, Jacob Riis Jensen, Jørn Märcher Hvam

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearch

Abstract

Semiconductor quantum dots are considered a promising material system for future optical devices and quantum computers. We have studied the low-temperature photoluminescence properties of single InGaAs quantum dots embedded in GaAs. The high spatial resolution required for resolving single dots is obtained by exciting and detecting the photoluminescence through a microscope objective which is located inside the cryostat. Furthermore, e-beam lithography and mesa etching have been used to reduce the size of the detection area to a few hundred nanometers in diameter. These techniques allow us to resolve luminescence lines from individual quantum dots, revealing an atomic-like spectrum of sharp transition lines. A parameter of fundamental importance is the intrinsic linewidth of these transitions. Using high-resolution spectroscopy we have determined the linewidth and investigated its dependence on temperature, which gives information about how the exciton confined to the quantum dot interacts with the surrounding lattice.
Original languageEnglish
Title of host publicationProceedings, Annual meeting of the Danish Optical Society
Number of pages44
Place of PublicationLyngby
PublisherDOPS
Publication date1999
Publication statusPublished - 1999
Event1999 Annual meeting of the Danish Optical Society - Lyngby, Denmark
Duration: 18 Nov 199919 Nov 1999

Conference

Conference1999 Annual meeting of the Danish Optical Society
Country/TerritoryDenmark
CityLyngby
Period18/11/199919/11/1999

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