Photoluminescence Quantum Yield of Fluorescent Silicon Carbide Determined by an Integrating Sphere Setup

Yi Wei, Haiyan Ou*

*Corresponding author for this work

Research output: Contribution to journalJournal articleResearchpeer-review

26 Downloads (Pure)

Abstract

The excitation-dependent photoluminescence quantum yield (PL-QY) of strong n-type nitrogen-boron codoped 6H fluorescent silicon carbide (f-SiC) at room temperature is experimentally determined for the first time. The PL-QY measurements are realized by an integrating sphere system based on a classical two-measurement approach. In particular, in accordance to the difference between our in-lab setup and the standard setup of the two-measurement approach, we have technically modified the experimental design, the data processing algorithm, and the estimation of relative uncertainty. The measured highest PL-QY of f-SiC samples is found to reach above 30%. We compare the PL-QYs at a certain excitation power of all f-SiC samples by considering their intrinsic defect densities. Finally, the evolution of the excitation power-dependent PL-QY of f-SiC is attributed to both band-to-band and impurity-assisted Auger recombination.

Original languageEnglish
JournalACS Omega
Volume4
Issue number13
Pages (from-to)15488-15495
DOIs
Publication statusPublished - 1 Jan 2019

Cite this

@article{2c834107448443a98fe2414232dcccb8,
title = "Photoluminescence Quantum Yield of Fluorescent Silicon Carbide Determined by an Integrating Sphere Setup",
abstract = "The excitation-dependent photoluminescence quantum yield (PL-QY) of strong n-type nitrogen-boron codoped 6H fluorescent silicon carbide (f-SiC) at room temperature is experimentally determined for the first time. The PL-QY measurements are realized by an integrating sphere system based on a classical two-measurement approach. In particular, in accordance to the difference between our in-lab setup and the standard setup of the two-measurement approach, we have technically modified the experimental design, the data processing algorithm, and the estimation of relative uncertainty. The measured highest PL-QY of f-SiC samples is found to reach above 30{\%}. We compare the PL-QYs at a certain excitation power of all f-SiC samples by considering their intrinsic defect densities. Finally, the evolution of the excitation power-dependent PL-QY of f-SiC is attributed to both band-to-band and impurity-assisted Auger recombination.",
author = "Yi Wei and Haiyan Ou",
year = "2019",
month = "1",
day = "1",
doi = "10.1021/acsomega.9b01753",
language = "English",
volume = "4",
pages = "15488--15495",
journal = "ACS Omega",
issn = "2470-1343",
publisher = "ACS Publications",
number = "13",

}

Photoluminescence Quantum Yield of Fluorescent Silicon Carbide Determined by an Integrating Sphere Setup. / Wei, Yi; Ou, Haiyan.

In: ACS Omega, Vol. 4, No. 13, 01.01.2019, p. 15488-15495.

Research output: Contribution to journalJournal articleResearchpeer-review

TY - JOUR

T1 - Photoluminescence Quantum Yield of Fluorescent Silicon Carbide Determined by an Integrating Sphere Setup

AU - Wei, Yi

AU - Ou, Haiyan

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The excitation-dependent photoluminescence quantum yield (PL-QY) of strong n-type nitrogen-boron codoped 6H fluorescent silicon carbide (f-SiC) at room temperature is experimentally determined for the first time. The PL-QY measurements are realized by an integrating sphere system based on a classical two-measurement approach. In particular, in accordance to the difference between our in-lab setup and the standard setup of the two-measurement approach, we have technically modified the experimental design, the data processing algorithm, and the estimation of relative uncertainty. The measured highest PL-QY of f-SiC samples is found to reach above 30%. We compare the PL-QYs at a certain excitation power of all f-SiC samples by considering their intrinsic defect densities. Finally, the evolution of the excitation power-dependent PL-QY of f-SiC is attributed to both band-to-band and impurity-assisted Auger recombination.

AB - The excitation-dependent photoluminescence quantum yield (PL-QY) of strong n-type nitrogen-boron codoped 6H fluorescent silicon carbide (f-SiC) at room temperature is experimentally determined for the first time. The PL-QY measurements are realized by an integrating sphere system based on a classical two-measurement approach. In particular, in accordance to the difference between our in-lab setup and the standard setup of the two-measurement approach, we have technically modified the experimental design, the data processing algorithm, and the estimation of relative uncertainty. The measured highest PL-QY of f-SiC samples is found to reach above 30%. We compare the PL-QYs at a certain excitation power of all f-SiC samples by considering their intrinsic defect densities. Finally, the evolution of the excitation power-dependent PL-QY of f-SiC is attributed to both band-to-band and impurity-assisted Auger recombination.

U2 - 10.1021/acsomega.9b01753

DO - 10.1021/acsomega.9b01753

M3 - Journal article

VL - 4

SP - 15488

EP - 15495

JO - ACS Omega

JF - ACS Omega

SN - 2470-1343

IS - 13

ER -