Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films

Weifang Lu, Yoshimi Iwasa, Yiyu Ou, Satoshi Kamiyama, Paul Michael Petersen, Haiyan Ou

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.
Original languageEnglish
Title of host publicationProceedings of CLEO: Science and Innovations 2016
Number of pages2
PublisherOptical Society of America OSA
Publication date2016
Article numberSM1R.5
ISBN (Print)978-1-943580-11-8
DOIs
Publication statusPublished - 2016
EventConference on Lasers and Electro-Optics 2016 - San Jose, California, United States
Duration: 5 Jun 201610 Jun 2016

Conference

ConferenceConference on Lasers and Electro-Optics 2016
CountryUnited States
CitySan Jose, California
Period05/06/201610/06/2016

Bibliographical note

From the session: Photonic Nanostructures (SM1R)

Cite this

Lu, W., Iwasa, Y., Ou, Y., Kamiyama, S., Petersen, P. M., & Ou, H. (2016). Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films. In Proceedings of CLEO: Science and Innovations 2016 [SM1R.5] Optical Society of America OSA. https://doi.org/10.1364/CLEO_SI.2016.SM1R.5