Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al2O3 Films

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The influence of thickness of atomic layer deposited Al2O3 films on nano-textured fluorescent 6H-SiC passivation is investigated. The passivation effect on the light emission has been characterized by photoluminescence and time-resolved photoluminescence at room temperature. The results show that 20nm thickness of Al2O3 layer is favorable to observe a large photoluminescence enhancement (25.9%) and long carrier lifetime (0.86ms). This is a strong indication for an interface hydrogenation that takes place during post-thermal annealing. These results show that an Al2O3 layer could serve as passivation in fluorescent SiC based white LEDs applications.
Original languageEnglish
JournalMaterials Science Forum
Volume858
Pages (from-to)493-496
ISSN0255-5476
DOIs
Publication statusPublished - 2016

Bibliographical note

http://www.scientific.net/MSF.858.493<br/>10.4028/www.scientific.net/MSF.858.493

CitationsWeb of Science® Times Cited: No match on DOI

    Research areas

  • Photoluminescence, Fluorescent SiC, Passivation, Al2O3, Lifetime, ALD

ID: 124021821