Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al2O3 Films

Weifang Lu; Yiyu Ou; Valdas Jokubavicius; Ahmed Fadil; Mikael Syväjärvi; Volker Buschmann; Steffen Ruttinger; Paul Michael Petersen; Haiyan Ou

doi:10.4028/www.scientific.net/MSF.858.493

Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al2O3 Films

Weifang Lu, Yiyu Ou, Valdas Jokubavicius, Ahmed Fadil, Mikael Syväjärvi, Volker Buschmann, Steffen Ruttinger, Paul Michael Petersen, Haiyan Ou

Research output: Contribution to journal › Journal article › Research › peer-review

Abstract

The influence of thickness of atomic layer deposited Al2O3 films on nano-textured fluorescent 6H-SiC passivation is investigated. The passivation effect on the light emission has been characterized by photoluminescence and time-resolved photoluminescence at room temperature. The results show that 20nm thickness of Al2O3 layer is favorable to observe a large photoluminescence enhancement (25.9%) and long carrier lifetime (0.86ms). This is a strong indication for an interface hydrogenation that takes place during post-thermal annealing. These results show that an Al2O3 layer could serve as passivation in fluorescent SiC based white LEDs applications.

Original language	English
Journal	Materials Science Forum
Volume	858
Pages (from-to)	493-496
ISSN	0255-5476
DOIs	https://doi.org/10.4028/www.scientific.net/MSF.858.493
Publication status	Published - 2016

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http://www.scientific.net/MSF.858.493<br/>10.4028/www.scientific.net/MSF.858.493

Keywords

Photoluminescence
Fluorescent SiC
Passivation
Al2O3
Lifetime
ALD

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title = "Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al2O3 Films",

abstract = "The influence of thickness of atomic layer deposited Al2O3 films on nano-textured fluorescent 6H-SiC passivation is investigated. The passivation effect on the light emission has been characterized by photoluminescence and time-resolved photoluminescence at room temperature. The results show that 20nm thickness of Al2O3 layer is favorable to observe a large photoluminescence enhancement (25.9%) and long carrier lifetime (0.86ms). This is a strong indication for an interface hydrogenation that takes place during post-thermal annealing. These results show that an Al2O3 layer could serve as passivation in fluorescent SiC based white LEDs applications. ",

keywords = "Photoluminescence, Fluorescent SiC, Passivation, Al2O3, Lifetime, ALD",

author = "Weifang Lu and Yiyu Ou and Valdas Jokubavicius and Ahmed Fadil and Mikael Syv{\"a}j{\"a}rvi and Volker Buschmann and Steffen Ruttinger and Petersen, {Paul Michael} and Haiyan Ou",

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doi = "10.4028/www.scientific.net/MSF.858.493",

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TY - JOUR

T1 - Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al2O3 Films

AU - Lu, Weifang

AU - Ou, Yiyu

AU - Jokubavicius, Valdas

AU - Fadil, Ahmed

AU - Syväjärvi, Mikael

AU - Buschmann, Volker

AU - Ruttinger, Steffen

AU - Petersen, Paul Michael

AU - Ou, Haiyan

N1 - http://www.scientific.net/MSF.858.493<br/>10.4028/www.scientific.net/MSF.858.493

PY - 2016

Y1 - 2016

N2 - The influence of thickness of atomic layer deposited Al2O3 films on nano-textured fluorescent 6H-SiC passivation is investigated. The passivation effect on the light emission has been characterized by photoluminescence and time-resolved photoluminescence at room temperature. The results show that 20nm thickness of Al2O3 layer is favorable to observe a large photoluminescence enhancement (25.9%) and long carrier lifetime (0.86ms). This is a strong indication for an interface hydrogenation that takes place during post-thermal annealing. These results show that an Al2O3 layer could serve as passivation in fluorescent SiC based white LEDs applications.

AB - The influence of thickness of atomic layer deposited Al2O3 films on nano-textured fluorescent 6H-SiC passivation is investigated. The passivation effect on the light emission has been characterized by photoluminescence and time-resolved photoluminescence at room temperature. The results show that 20nm thickness of Al2O3 layer is favorable to observe a large photoluminescence enhancement (25.9%) and long carrier lifetime (0.86ms). This is a strong indication for an interface hydrogenation that takes place during post-thermal annealing. These results show that an Al2O3 layer could serve as passivation in fluorescent SiC based white LEDs applications.

KW - Photoluminescence

KW - Fluorescent SiC

KW - Passivation

KW - Al2O3

KW - Lifetime

KW - ALD

U2 - 10.4028/www.scientific.net/MSF.858.493

DO - 10.4028/www.scientific.net/MSF.858.493

M3 - Journal article

SN - 0255-5476

VL - 858

SP - 493

EP - 496

JO - Materials Science Forum

JF - Materials Science Forum

ER -

Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al2O3 Films

Abstract

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Keywords

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