The influence of thickness of atomic layer deposited Al2O3 films on nano-textured fluorescent 6H-SiC passivation is investigated. The passivation effect on the light emission has been characterized by photoluminescence and time-resolved photoluminescence at room temperature. The results show that 20nm thickness of Al2O3 layer is favorable to observe a large photoluminescence enhancement (25.9%) and long carrier lifetime (0.86ms). This is a strong indication for an interface hydrogenation that takes place during post-thermal annealing. These results show that an Al2O3 layer could serve as passivation in fluorescent SiC based white LEDs applications.
|Journal||Materials Science Forum|
|Publication status||Published - 2016|
- Fluorescent SiC
Lu, W., Ou, Y., Jokubavicius, V., Fadil, A., Syväjärvi, M., Buschmann, V., Ruttinger, S., Petersen, P. M., & Ou, H. (2016). Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al2O3 Films. Materials Science Forum, 858, 493-496. https://doi.org/10.4028/www.scientific.net/MSF.858.493