Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al2O3 Films

Weifang Lu, Yiyu Ou, Valdas Jokubavicius, Ahmed Fadil, Mikael Syväjärvi, Volker Buschmann, Steffen Ruttinger, Paul Michael Petersen, Haiyan Ou

Research output: Contribution to journalJournal articleResearchpeer-review

Abstract

The influence of thickness of atomic layer deposited Al2O3 films on nano-textured fluorescent 6H-SiC passivation is investigated. The passivation effect on the light emission has been characterized by photoluminescence and time-resolved photoluminescence at room temperature. The results show that 20nm thickness of Al2O3 layer is favorable to observe a large photoluminescence enhancement (25.9%) and long carrier lifetime (0.86ms). This is a strong indication for an interface hydrogenation that takes place during post-thermal annealing. These results show that an Al2O3 layer could serve as passivation in fluorescent SiC based white LEDs applications.
Original languageEnglish
JournalMaterials Science Forum
Volume858
Pages (from-to)493-496
ISSN0255-5476
DOIs
Publication statusPublished - 2016

Bibliographical note

http://www.scientific.net/MSF.858.493<br/>10.4028/www.scientific.net/MSF.858.493

Keywords

  • Photoluminescence
  • Fluorescent SiC
  • Passivation
  • Al2O3
  • Lifetime
  • ALD

Cite this