Boron - and nitrogen-doped 6H silicon carbide epilayers grown on low off-axis 6H silicon carbide substrates have been characterized by photoluminescence and Raman spectroscopy. Combined with secondary ion mass spectrometry results, preferable doping type and optimized concentration could be proposed to obtain strong donor to acceptor pair band luminescence.
|Conference||International Conference on Silicon Carbide and Related Materials|
|City||Cleveland, Ohio, USA|
|Period||01/01/2011 → …|
- Raman spectroscopy
- Sublimation epitaxy