Photoluminescence and Raman spectroscopy characterization of boron- and nitrogen-doped 6H silicon carbide

Yiyu Ou; Valdas Jokubavicius; Chuan Liu; Rolf W. Berg; Margareta Linnarsson; Satoshi Kamiyama; Zhaoyue Lu; Rositza Yakimova; Mikael Syväjärvi; Haiyan Ou

Photoluminescence and Raman spectroscopy characterization of boron- and nitrogen-doped 6H silicon carbide

Yiyu Ou, Valdas Jokubavicius, Chuan Liu, Rolf W. Berg, Margareta Linnarsson, Satoshi Kamiyama, Zhaoyue Lu, Rositza Yakimova, Mikael Syväjärvi, Haiyan Ou

Department of Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Abstract

Boron - and nitrogen-doped 6H silicon carbide epilayers grown on low off-axis 6H silicon carbide substrates have been characterized by photoluminescence and Raman spectroscopy. Combined with secondary ion mass spectrometry results, preferable doping type and optimized concentration could be proposed to obtain strong donor to acceptor pair band luminescence.

Original language	English
Title of host publication	Proceedings of ICSCRM
Publication date	2011
Pages	We P-58
Publication status	Published - 2011
Event	14th International Conference on Silicon Carbide and Related Materials 2011 - Cleveland, United States Duration: 11 Sept 2011 → 16 Sept 2011

Conference

Conference	14th International Conference on Silicon Carbide and Related Materials 2011
Country/Territory	United States
City	Cleveland
Period	11/09/2011 → 16/09/2011

Keywords

Raman spectroscopy
6H-SiC
Photoluminescence
Sublimation epitaxy

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@inproceedings{7ac2895587ab4f87946f46b6b043b333,

title = "Photoluminescence and Raman spectroscopy characterization of boron- and nitrogen-doped 6H silicon carbide",

abstract = "Boron - and nitrogen-doped 6H silicon carbide epilayers grown on low off-axis 6H silicon carbide substrates have been characterized by photoluminescence and Raman spectroscopy. Combined with secondary ion mass spectrometry results, preferable doping type and optimized concentration could be proposed to obtain strong donor to acceptor pair band luminescence.",

keywords = "Raman spectroscopy, 6H-SiC, Photoluminescence, Sublimation epitaxy",

author = "Yiyu Ou and Valdas Jokubavicius and Chuan Liu and Berg, {Rolf W.} and Margareta Linnarsson and Satoshi Kamiyama and Zhaoyue Lu and Rositza Yakimova and Mikael Syv{\"a}j{\"a}rvi and Haiyan Ou",

year = "2011",

language = "English",

pages = "We P--58",

booktitle = "Proceedings of ICSCRM",

note = "14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM ; Conference date: 11-09-2011 Through 16-09-2011",

}

Ou, Y, Jokubavicius, V, Liu, C, Berg, RW, Linnarsson, M, Kamiyama, S, Lu, Z, Yakimova, R, Syväjärvi, M & Ou, H 2011, Photoluminescence and Raman spectroscopy characterization of boron- and nitrogen-doped 6H silicon carbide. in Proceedings of ICSCRM. pp. We P-58, 14th International Conference on Silicon Carbide and Related Materials 2011, Cleveland, Ohio, United States, 11/09/2011.

TY - GEN

T1 - Photoluminescence and Raman spectroscopy characterization of boron- and nitrogen-doped 6H silicon carbide

AU - Ou, Yiyu

AU - Jokubavicius, Valdas

AU - Liu, Chuan

AU - Berg, Rolf W.

AU - Linnarsson, Margareta

AU - Kamiyama, Satoshi

AU - Lu, Zhaoyue

AU - Yakimova, Rositza

AU - Syväjärvi, Mikael

AU - Ou, Haiyan

PY - 2011

Y1 - 2011

N2 - Boron - and nitrogen-doped 6H silicon carbide epilayers grown on low off-axis 6H silicon carbide substrates have been characterized by photoluminescence and Raman spectroscopy. Combined with secondary ion mass spectrometry results, preferable doping type and optimized concentration could be proposed to obtain strong donor to acceptor pair band luminescence.

AB - Boron - and nitrogen-doped 6H silicon carbide epilayers grown on low off-axis 6H silicon carbide substrates have been characterized by photoluminescence and Raman spectroscopy. Combined with secondary ion mass spectrometry results, preferable doping type and optimized concentration could be proposed to obtain strong donor to acceptor pair band luminescence.

KW - Raman spectroscopy

KW - 6H-SiC

KW - Photoluminescence

KW - Sublimation epitaxy

M3 - Article in proceedings

SP - We P-58

BT - Proceedings of ICSCRM

T2 - 14th International Conference on Silicon Carbide and Related Materials 2011

Y2 - 11 September 2011 through 16 September 2011

ER -

Photoluminescence and Raman spectroscopy characterization of boron- and nitrogen-doped 6H silicon carbide

Abstract

Conference

Keywords

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