Photoluminescence and Raman spectroscopy characterization of boron- and nitrogen-doped 6H silicon carbide

Yiyu Ou, Valdas Jokubavicius, Chuan Liu, Rolf W. Berg, Margareta Linnarsson, Satoshi Kamiyama, Zhaoyue Lu, Rositza Yakimova, Mikael Syväjärvi, Haiyan Ou

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Abstract

Boron - and nitrogen-doped 6H silicon carbide epilayers grown on low off-axis 6H silicon carbide substrates have been characterized by photoluminescence and Raman spectroscopy. Combined with secondary ion mass spectrometry results, preferable doping type and optimized concentration could be proposed to obtain strong donor to acceptor pair band luminescence.
Original languageEnglish
Title of host publicationProceedings of ICSCRM
Publication date2011
PagesWe P-58
Publication statusPublished - 2011
EventInternational Conference on Silicon Carbide and Related Materials - Cleveland, Ohio, USA
Duration: 1 Jan 2011 → …

Conference

ConferenceInternational Conference on Silicon Carbide and Related Materials
CityCleveland, Ohio, USA
Period01/01/2011 → …

Keywords

  • Raman spectroscopy
  • 6H-SiC
  • Photoluminescence
  • Sublimation epitaxy

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